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    Rights statement: Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

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Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications

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Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications. / Orchard, Jonathan; Woodhead, Christopher; Shutts, Samuel et al.
Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. ed. / Diana L. Huffaker; Holger Eisele; Kimberly A. Dick. Vol. 9758 SPIE, 2016. 975809 (Proceedings of SPIE).

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Orchard, J, Woodhead, C, Shutts, S, Wu, J, Sobiesierski, A, Young, RJ, Beanland, R, Liu, H, Smowton, P & Mowbray, D 2016, Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications. in DL Huffaker, H Eisele & KA Dick (eds), Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. vol. 9758, 975809, Proceedings of SPIE, SPIE. https://doi.org/10.1117/12.2209693, https://doi.org/10.1117/12.2209693

APA

Orchard, J., Woodhead, C., Shutts, S., Wu, J., Sobiesierski, A., Young, R. J., Beanland, R., Liu, H., Smowton, P., & Mowbray, D. (2016). Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications. In D. L. Huffaker, H. Eisele, & K. A. Dick (Eds.), Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII (Vol. 9758). Article 975809 (Proceedings of SPIE). SPIE. https://doi.org/10.1117/12.2209693, https://doi.org/10.1117/12.2209693

Vancouver

Orchard J, Woodhead C, Shutts S, Wu J, Sobiesierski A, Young RJ et al. Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications. In Huffaker DL, Eisele H, Dick KA, editors, Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. Vol. 9758. SPIE. 2016. 975809. (Proceedings of SPIE). doi: 10.1117/12.2209693, 10.1117/12.2209693

Author

Orchard, Jonathan ; Woodhead, Christopher ; Shutts, Samuel et al. / Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications. Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. editor / Diana L. Huffaker ; Holger Eisele ; Kimberly A. Dick. Vol. 9758 SPIE, 2016. (Proceedings of SPIE).

Bibtex

@inproceedings{33a2e95842b3499fa98c3800eba61bac,
title = "Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications",
abstract = "Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.",
keywords = "Quantum dots, Nanostructures, Telecoms, Epitaxy, semiconductor",
author = "Jonathan Orchard and Christopher Woodhead and Samuel Shutts and Jiang Wu and Angela Sobiesierski and Young, {Robert James} and R Beanland and Huiyun Liu and Peter Smowton and David Mowbray",
note = "Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. ",
year = "2016",
month = mar,
day = "15",
doi = "10.1117/12.2209693",
language = "English",
isbn = " 9781628419931",
volume = "9758",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Huffaker, {Diana L.} and Holger Eisele and Dick, {Kimberly A.}",
booktitle = "Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII",

}

RIS

TY - GEN

T1 - Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications

AU - Orchard, Jonathan

AU - Woodhead, Christopher

AU - Shutts, Samuel

AU - Wu, Jiang

AU - Sobiesierski, Angela

AU - Young, Robert James

AU - Beanland, R

AU - Liu, Huiyun

AU - Smowton, Peter

AU - Mowbray, David

N1 - Copyright 2016 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.

PY - 2016/3/15

Y1 - 2016/3/15

N2 - Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.

AB - Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.

KW - Quantum dots

KW - Nanostructures

KW - Telecoms

KW - Epitaxy

KW - semiconductor

U2 - 10.1117/12.2209693

DO - 10.1117/12.2209693

M3 - Conference contribution/Paper

SN - 9781628419931

VL - 9758

T3 - Proceedings of SPIE

BT - Proceedings Volume 9758, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII

A2 - Huffaker, Diana L.

A2 - Eisele, Holger

A2 - Dick, Kimberly A.

PB - SPIE

ER -