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Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons

Research output: Contribution to journalJournal article

Published

Journal publication date04/2005
JournalJournal of Applied Physics
Journal number7
Volume97
Pages074502
Original languageEnglish

Abstract

We report the development of a general analytic method for describing the responsivity and resolution for a pixellated semiconductor detector structure in terms of device and material properties. The method allows both drift and diffusive transport to be modelled, for which previously only Monte Carlo techniques have been available. We obtain a general solution, and show specific results for an array of square pixels, illustrating the device constraints required to optimize spatial and spectral resolution.