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Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots. / Falko, Vladimir I.; Altshuler, B. L.; Tsyplyatyev, O.
In: Physical review letters, Vol. 95, No. 7, 076603, 12.08.2005.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Falko, VI, Altshuler, BL & Tsyplyatyev, O 2005, 'Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots', Physical review letters, vol. 95, no. 7, 076603. https://doi.org/10.1103/PhysRevLett.95.076603

APA

Falko, V. I., Altshuler, B. L., & Tsyplyatyev, O. (2005). Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots. Physical review letters, 95(7), Article 076603. https://doi.org/10.1103/PhysRevLett.95.076603

Vancouver

Falko VI, Altshuler BL, Tsyplyatyev O. Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots. Physical review letters. 2005 Aug 12;95(7):076603. doi: 10.1103/PhysRevLett.95.076603

Author

Falko, Vladimir I. ; Altshuler, B. L. ; Tsyplyatyev, O. / Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots. In: Physical review letters. 2005 ; Vol. 95, No. 7.

Bibtex

@article{6bf996ba7a344bdf8131b867d51f5f6f,
title = "Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots",
abstract = "Inelastic spin relaxation and spin splitting s in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, s demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the {"}thickness{"} of the GaAs dot, the relaxation can be an order of magnitude faster for B||[100] than for B||[110].",
keywords = "semiconductor quantum dots, III-V semiconductors, gallium arsenide, g-factor, spin-orbit interactions, magnetoelectronics",
author = "Falko, {Vladimir I.} and Altshuler, {B. L.} and O. Tsyplyatyev",
note = "Our prediction that inelastic spin relaxation and spin splitting in lateral GaAs/AlGaAs quantum dots have a nonlinear magnetic field dependence and pronounced anisotropy (with respect to the in-plane orientation of a magnetic field) resulted in a collaboration with Marcus at Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics",
year = "2005",
month = aug,
day = "12",
doi = "10.1103/PhysRevLett.95.076603",
language = "English",
volume = "95",
journal = "Physical review letters",
issn = "1079-7114",
publisher = "American Physical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Anisotropy of Spin Splitting and Spin Relaxation in Lateral Quantum Dots

AU - Falko, Vladimir I.

AU - Altshuler, B. L.

AU - Tsyplyatyev, O.

N1 - Our prediction that inelastic spin relaxation and spin splitting in lateral GaAs/AlGaAs quantum dots have a nonlinear magnetic field dependence and pronounced anisotropy (with respect to the in-plane orientation of a magnetic field) resulted in a collaboration with Marcus at Harvard. RAE_import_type : Journal article RAE_uoa_type : Physics

PY - 2005/8/12

Y1 - 2005/8/12

N2 - Inelastic spin relaxation and spin splitting s in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, s demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B||[100] than for B||[110].

AB - Inelastic spin relaxation and spin splitting s in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, s demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B||[100] than for B||[110].

KW - semiconductor quantum dots

KW - III-V semiconductors

KW - gallium arsenide

KW - g-factor

KW - spin-orbit interactions

KW - magnetoelectronics

U2 - 10.1103/PhysRevLett.95.076603

DO - 10.1103/PhysRevLett.95.076603

M3 - Journal article

VL - 95

JO - Physical review letters

JF - Physical review letters

SN - 1079-7114

IS - 7

M1 - 076603

ER -