12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Anomalously strong pinning of the filling facto...
View graph of relations

« Back

Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Research output: Contribution to journalJournal article

Published

  • T. J. B. M. Janssen
  • A. Tzalenchuk
  • R. Yakimova
  • S. Kubatkin
  • S. Lara-Avila
  • S. Kopylov
  • Vladimir Falko
???articleNumber???233402
Journal publication date6/06/2011
JournalPhysical Review B
Journal number23
Volume83
Number of pages4
Original languageEnglish

Abstract

We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

Bibliographic note

©2011 American Physical Society