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Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

Research output: Contribution to journalJournal article


  • T. J. B. M. Janssen
  • A. Tzalenchuk
  • R. Yakimova
  • S. Kubatkin
  • S. Lara-Avila
  • S. Kopylov
  • Vladimir Falko
Article number233402
<mark>Journal publication date</mark>6/06/2011
<mark>Journal</mark>Physical Review B
Issue number23
Number of pages4
<mark>Original language</mark>English


We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

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©2011 American Physical Society