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Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

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Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene. / Janssen, T. J. B. M.; Tzalenchuk, A.; Yakimova, R. et al.
In: Physical review B, Vol. 83, No. 23, 233402, 06.06.2011.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Janssen, TJBM, Tzalenchuk, A, Yakimova, R, Kubatkin, S, Lara-Avila, S, Kopylov, S & Falko, V 2011, 'Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene', Physical review B, vol. 83, no. 23, 233402. https://doi.org/10.1103/PhysRevB.83.233402

APA

Janssen, T. J. B. M., Tzalenchuk, A., Yakimova, R., Kubatkin, S., Lara-Avila, S., Kopylov, S., & Falko, V. (2011). Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene. Physical review B, 83(23), Article 233402. https://doi.org/10.1103/PhysRevB.83.233402

Vancouver

Janssen TJBM, Tzalenchuk A, Yakimova R, Kubatkin S, Lara-Avila S, Kopylov S et al. Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene. Physical review B. 2011 Jun 6;83(23):233402. doi: 10.1103/PhysRevB.83.233402

Author

Janssen, T. J. B. M. ; Tzalenchuk, A. ; Yakimova, R. et al. / Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene. In: Physical review B. 2011 ; Vol. 83, No. 23.

Bibtex

@article{55a26863291e4c63b7c25abc2dc40ceb,
title = "Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene",
abstract = "We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.",
author = "Janssen, {T. J. B. M.} and A. Tzalenchuk and R. Yakimova and S. Kubatkin and S. Lara-Avila and S. Kopylov and Vladimir Falko",
note = "{\textcopyright}2011 American Physical Society",
year = "2011",
month = jun,
day = "6",
doi = "10.1103/PhysRevB.83.233402",
language = "English",
volume = "83",
journal = "Physical review B",
issn = "1098-0121",
publisher = "AMER PHYSICAL SOC",
number = "23",

}

RIS

TY - JOUR

T1 - Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene

AU - Janssen, T. J. B. M.

AU - Tzalenchuk, A.

AU - Yakimova, R.

AU - Kubatkin, S.

AU - Lara-Avila, S.

AU - Kopylov, S.

AU - Falko, Vladimir

N1 - ©2011 American Physical Society

PY - 2011/6/6

Y1 - 2011/6/6

N2 - We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

AB - We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.

U2 - 10.1103/PhysRevB.83.233402

DO - 10.1103/PhysRevB.83.233402

M3 - Journal article

VL - 83

JO - Physical review B

JF - Physical review B

SN - 1098-0121

IS - 23

M1 - 233402

ER -