Rights statement: ©2011 American Physical Society
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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
AU - Janssen, T. J. B. M.
AU - Tzalenchuk, A.
AU - Yakimova, R.
AU - Kubatkin, S.
AU - Lara-Avila, S.
AU - Kopylov, S.
AU - Falko, Vladimir
N1 - ©2011 American Physical Society
PY - 2011/6/6
Y1 - 2011/6/6
N2 - We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.
AB - We explore the robust quantization of the Hall resistance in epitaxial graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of quantum over classical capacitance in the charge transfer between the substrate and graphene is such that Landau levels (in particular, the one at exactly zero energy) remain completely filled over an extraordinarily broad range of magnetic fields. One important implication of this pinning of the filling factor is that the system can sustain a very high nondissipative current. This makes epitaxial graphene ideally suited for quantum resistance metrology, and we have achieved a precision of 3 parts in 1010 in the Hall resistance-quantization measurements.
U2 - 10.1103/PhysRevB.83.233402
DO - 10.1103/PhysRevB.83.233402
M3 - Journal article
VL - 83
JO - Physical review B
JF - Physical review B
SN - 1098-0121
IS - 23
M1 - 233402
ER -