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  • IEEE Abstract P Carrington Submitted (1)

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Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

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Abstract

III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.

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©2017 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.