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Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paper

Published
Publication date20/11/2017
Host publication30th Annual Conference of the IEEE Photonics Society, IPC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages307-308
Number of pages2
ISBN (Electronic)9781509065783
Original languageEnglish
Event30th Annual Conference of the IEEE Photonics Society, IPC 2017 - Lake Buena Vista, United States
Duration: 1/10/20175/10/2017

Conference

Conference30th Annual Conference of the IEEE Photonics Society, IPC 2017
CountryUnited States
CityLake Buena Vista
Period1/10/175/10/17

Conference

Conference30th Annual Conference of the IEEE Photonics Society, IPC 2017
CountryUnited States
CityLake Buena Vista
Period1/10/175/10/17

Abstract

III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.

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©2017 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.