Home > Research > Publications & Outputs > Antimony based mid-infrared semiconductor mater...

Research

Associated organisational units

Electronic data

  • IEEE Abstract P Carrington Submitted (1)

    Rights statement: ©2017 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

    Accepted author manuscript, 469 KB, PDF document

    Available under license: CC BY-NC: Creative Commons Attribution-NonCommercial 4.0 International License

Links

Text available via DOI:

Keywords

View graph of relations

Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Published

Standard

Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. / Carrington, P. J.; Delli, E.; Hodgson, P. D. et al.
30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 307-308.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Carrington, PJ, Delli, E, Hodgson, PD, Repiso, E, Craig, A, Marshall, A & Krier, A 2017, Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. in 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., pp. 307-308, 30th Annual Conference of the IEEE Photonics Society, IPC 2017, Lake Buena Vista, United States, 1/10/17. https://doi.org/10.1109/IPCon.2017.8116118

APA

Carrington, P. J., Delli, E., Hodgson, P. D., Repiso, E., Craig, A., Marshall, A., & Krier, A. (2017). Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017 (pp. 307-308). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2017.8116118

Vancouver

Carrington PJ, Delli E, Hodgson PD, Repiso E, Craig A, Marshall A et al. Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. In 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 307-308 doi: 10.1109/IPCon.2017.8116118

Author

Carrington, P. J. ; Delli, E. ; Hodgson, P. D. et al. / Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates. 30th Annual Conference of the IEEE Photonics Society, IPC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 307-308

Bibtex

@inproceedings{d71fa8530cb042ec9169ae2850c510a9,
title = "Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates",
abstract = "III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.",
keywords = "GaSb, Mid-infrared, Molecular Beam Epitaxy",
author = "Carrington, {P. J.} and E. Delli and Hodgson, {P. D.} and E. Repiso and A. Craig and A. Marshall and A. Krier",
note = "{\textcopyright}2017 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.; 30th Annual Conference of the IEEE Photonics Society, IPC 2017 ; Conference date: 01-10-2017 Through 05-10-2017",
year = "2017",
month = nov,
day = "20",
doi = "10.1109/IPCon.2017.8116118",
language = "English",
pages = "307--308",
booktitle = "30th Annual Conference of the IEEE Photonics Society, IPC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

RIS

TY - GEN

T1 - Antimony based mid-infrared semiconductor materials and devices monolithically grown on silicon substrates

AU - Carrington, P. J.

AU - Delli, E.

AU - Hodgson, P. D.

AU - Repiso, E.

AU - Craig, A.

AU - Marshall, A.

AU - Krier, A.

N1 - ©2017 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

PY - 2017/11/20

Y1 - 2017/11/20

N2 - III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.

AB - III-V semiconductor heterostructures grown on GaSb and InAs substrates are widely used to produce high performance optoelectronic devices operating in the technologically important mid-infrared spectral range. However, these substrates are expensive, only available in small sizes and have low thermal conductivity. Integration of III-Vs onto silicon substrates offers the opportunity to overcome these shortcomings and opens the possibility of new applications in lab-on-chip MIR photonic integrated circuits. However, the unusual III-V/Si interface and large lattice mismatch presents challenges to epitaxial growth. Here, we report on novel techniques employed to grow high quality Sb-based optoelectronic devices on silicon using molecular beam epitaxy.

KW - GaSb

KW - Mid-infrared

KW - Molecular Beam Epitaxy

U2 - 10.1109/IPCon.2017.8116118

DO - 10.1109/IPCon.2017.8116118

M3 - Conference contribution/Paper

AN - SCOPUS:85043525841

SP - 307

EP - 308

BT - 30th Annual Conference of the IEEE Photonics Society, IPC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th Annual Conference of the IEEE Photonics Society, IPC 2017

Y2 - 1 October 2017 through 5 October 2017

ER -