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Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating. / Bai, Jie; Daaoub, Abdalghani; Sangtarash, Sara et al.
In: Nature Materials, Vol. 18, 11.02.2019, p. 364-369.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Bai, J, Daaoub, A, Sangtarash, S, Li, X, Tang, Y, Zou, Q, Sadeghi, H, Liu, S, Huang, X, Tan, Z, Liu, J, Yang, Y, Shi, J, Mészáros, G, Chen, W, Lambert, C & Hong, W 2019, 'Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating', Nature Materials, vol. 18, pp. 364-369. https://doi.org/10.1038/s41563-018-0265-4

APA

Bai, J., Daaoub, A., Sangtarash, S., Li, X., Tang, Y., Zou, Q., Sadeghi, H., Liu, S., Huang, X., Tan, Z., Liu, J., Yang, Y., Shi, J., Mészáros, G., Chen, W., Lambert, C., & Hong, W. (2019). Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating. Nature Materials, 18, 364-369. https://doi.org/10.1038/s41563-018-0265-4

Vancouver

Bai J, Daaoub A, Sangtarash S, Li X, Tang Y, Zou Q et al. Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating. Nature Materials. 2019 Feb 11;18:364-369. doi: 10.1038/s41563-018-0265-4

Author

Bai, Jie ; Daaoub, Abdalghani ; Sangtarash, Sara et al. / Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating. In: Nature Materials. 2019 ; Vol. 18. pp. 364-369.

Bibtex

@article{c376e1364b2f492894a5a963d8974a40,
title = "Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating",
abstract = "Controlling the electrical conductance and in particular the occurrence of quantum interference in single-molecule junctions through gating effects has potential for the realization of high-performance functional molecular devices. In this work we used an electrochemically gated, mechanically controllable break junction technique to tune the electronic behaviour of thiophene-based molecular junctions that show destructive quantum interference features. By varying the voltage applied to the electrochemical gate at room temperature, we reached a conductance minimum that provides direct evidence of charge transport controlled by an anti-resonance arising from destructive quantum interference. Our molecular system enables conductance tuning close to two orders of magnitude within the non-faradaic potential region, which is significantly higher than that achieved with molecules not showing destructive quantum interference. Our experimental results, interpreted using quantum transport theory, demonstrate that electrochemical gating is a promising strategy for obtaining improved in situ control over the electrical performance of interference-based molecular devices. {\textcopyright} 2019, The Author(s), under exclusive licence to Springer Nature Limited.",
keywords = "Molecules, Quantum interference devices, Statistical mechanics, Thiophene, Electrical conductance, Electrical performance, Electrochemical gates, Electrochemical gating, Mechanically controllable break junctions, Orders of magnitude, Quantum interference, Single-molecule junctions, Quantum chemistry",
author = "Jie Bai and Abdalghani Daaoub and Sara Sangtarash and Xiaohui Li and Yongxiang Tang and Qi Zou and Hatef Sadeghi and Shuai Liu and Xiaojuan Huang and Zhibing Tan and Junyang Liu and Yang Yang and Jia Shi and Gabor M{\'e}sz{\'a}ros and Wenbo Chen and Colin Lambert and Wenjing Hong",
year = "2019",
month = feb,
day = "11",
doi = "10.1038/s41563-018-0265-4",
language = "English",
volume = "18",
pages = "364--369",
journal = "Nature Materials",
issn = "1476-1122",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Anti-resonance features of destructive quantum interference in single-molecule thiophene junctions achieved by electrochemical gating

AU - Bai, Jie

AU - Daaoub, Abdalghani

AU - Sangtarash, Sara

AU - Li, Xiaohui

AU - Tang, Yongxiang

AU - Zou, Qi

AU - Sadeghi, Hatef

AU - Liu, Shuai

AU - Huang, Xiaojuan

AU - Tan, Zhibing

AU - Liu, Junyang

AU - Yang, Yang

AU - Shi, Jia

AU - Mészáros, Gabor

AU - Chen, Wenbo

AU - Lambert, Colin

AU - Hong, Wenjing

PY - 2019/2/11

Y1 - 2019/2/11

N2 - Controlling the electrical conductance and in particular the occurrence of quantum interference in single-molecule junctions through gating effects has potential for the realization of high-performance functional molecular devices. In this work we used an electrochemically gated, mechanically controllable break junction technique to tune the electronic behaviour of thiophene-based molecular junctions that show destructive quantum interference features. By varying the voltage applied to the electrochemical gate at room temperature, we reached a conductance minimum that provides direct evidence of charge transport controlled by an anti-resonance arising from destructive quantum interference. Our molecular system enables conductance tuning close to two orders of magnitude within the non-faradaic potential region, which is significantly higher than that achieved with molecules not showing destructive quantum interference. Our experimental results, interpreted using quantum transport theory, demonstrate that electrochemical gating is a promising strategy for obtaining improved in situ control over the electrical performance of interference-based molecular devices. © 2019, The Author(s), under exclusive licence to Springer Nature Limited.

AB - Controlling the electrical conductance and in particular the occurrence of quantum interference in single-molecule junctions through gating effects has potential for the realization of high-performance functional molecular devices. In this work we used an electrochemically gated, mechanically controllable break junction technique to tune the electronic behaviour of thiophene-based molecular junctions that show destructive quantum interference features. By varying the voltage applied to the electrochemical gate at room temperature, we reached a conductance minimum that provides direct evidence of charge transport controlled by an anti-resonance arising from destructive quantum interference. Our molecular system enables conductance tuning close to two orders of magnitude within the non-faradaic potential region, which is significantly higher than that achieved with molecules not showing destructive quantum interference. Our experimental results, interpreted using quantum transport theory, demonstrate that electrochemical gating is a promising strategy for obtaining improved in situ control over the electrical performance of interference-based molecular devices. © 2019, The Author(s), under exclusive licence to Springer Nature Limited.

KW - Molecules

KW - Quantum interference devices

KW - Statistical mechanics

KW - Thiophene

KW - Electrical conductance

KW - Electrical performance

KW - Electrochemical gates

KW - Electrochemical gating

KW - Mechanically controllable break junctions

KW - Orders of magnitude

KW - Quantum interference

KW - Single-molecule junctions

KW - Quantum chemistry

U2 - 10.1038/s41563-018-0265-4

DO - 10.1038/s41563-018-0265-4

M3 - Journal article

VL - 18

SP - 364

EP - 369

JO - Nature Materials

JF - Nature Materials

SN - 1476-1122

ER -