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Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

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Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice. / Zhuang, Qiandong; Yoon, S. F.; Zheng, H. Q.
In: Solid State Communications, Vol. 117, No. 8, 2001, p. 465-469.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Yoon, SF & Zheng, HQ 2001, 'Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice', Solid State Communications, vol. 117, no. 8, pp. 465-469. https://doi.org/10.1016/S0038-1098(00)00506-8

APA

Zhuang, Q., Yoon, S. F., & Zheng, H. Q. (2001). Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice. Solid State Communications, 117(8), 465-469. https://doi.org/10.1016/S0038-1098(00)00506-8

Vancouver

Zhuang Q, Yoon SF, Zheng HQ. Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice. Solid State Communications. 2001;117(8):465-469. doi: 10.1016/S0038-1098(00)00506-8

Author

Zhuang, Qiandong ; Yoon, S. F. ; Zheng, H. Q. / Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice. In: Solid State Communications. 2001 ; Vol. 117, No. 8. pp. 465-469.

Bibtex

@article{8dabcb7eb67c4c6c8e9e2828db055307,
title = "Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice",
abstract = "We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of ~40nm and density of 3 to 4x1010cm-2. The single-layer QDs have photoluminescence (PL) emission centred at 0.78eV with a linewidth of 64meV at low temperature (4K). Double-crystal X-ray diffraction (DCXRD) spectra showed evidence of significant As/P exchange during in situ annealing under P2 pressure before growing the spacer layer. An average P composition of ~30% in the resulting InAsP QDs in samples annealed for 50s was deduced from dynamical simulations of the experimental DCXRD spectra. The QDs superlattice PL emission exhibits a blueshift with increase of annealing time, and emission at 1.55m at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelength.",
keywords = "B. Epitaxy; D. Optical properties; E. Luminescence",
author = "Qiandong Zhuang and Yoon, {S. F.} and Zheng, {H. Q.}",
year = "2001",
doi = "10.1016/S0038-1098(00)00506-8",
language = "English",
volume = "117",
pages = "465--469",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",
number = "8",

}

RIS

TY - JOUR

T1 - Arsenic/phosphorus exchange and wavelength tuning of in situ annealed InAs/InP quantum dot superlattice

AU - Zhuang, Qiandong

AU - Yoon, S. F.

AU - Zheng, H. Q.

PY - 2001

Y1 - 2001

N2 - We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of ~40nm and density of 3 to 4x1010cm-2. The single-layer QDs have photoluminescence (PL) emission centred at 0.78eV with a linewidth of 64meV at low temperature (4K). Double-crystal X-ray diffraction (DCXRD) spectra showed evidence of significant As/P exchange during in situ annealing under P2 pressure before growing the spacer layer. An average P composition of ~30% in the resulting InAsP QDs in samples annealed for 50s was deduced from dynamical simulations of the experimental DCXRD spectra. The QDs superlattice PL emission exhibits a blueshift with increase of annealing time, and emission at 1.55m at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelength.

AB - We report the solid-source molecular beam epitaxial (SSMBE) growth of InAs/InP quantum dots (QDs) superlattices and the effect of As/P exchange. The InAs QDs were found to have an average lateral diameter of ~40nm and density of 3 to 4x1010cm-2. The single-layer QDs have photoluminescence (PL) emission centred at 0.78eV with a linewidth of 64meV at low temperature (4K). Double-crystal X-ray diffraction (DCXRD) spectra showed evidence of significant As/P exchange during in situ annealing under P2 pressure before growing the spacer layer. An average P composition of ~30% in the resulting InAsP QDs in samples annealed for 50s was deduced from dynamical simulations of the experimental DCXRD spectra. The QDs superlattice PL emission exhibits a blueshift with increase of annealing time, and emission at 1.55m at 300K was achieved. This observation holds promise for possible telecommunication device applications at long wavelength.

KW - B. Epitaxy; D. Optical properties; E. Luminescence

U2 - 10.1016/S0038-1098(00)00506-8

DO - 10.1016/S0038-1098(00)00506-8

M3 - Journal article

VL - 117

SP - 465

EP - 469

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 8

ER -