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Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102

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  • A Aziz
  • SJ Bending
  • H Roberts
  • S Crampin
  • PJ Heard
  • CH Marrows
Article number124102
<mark>Journal publication date</mark>15/12/2005
<mark>Journal</mark>Journal of Applied Physics
Issue number12
Number of pages4
<mark>Original language</mark>English


We demonstrate that a high-resolution Ga focused ion beam can be used to introduce artificial domain structures in Pt(1.6 nm)/Co(0.5 nm)/Pt(3.5 nm) trilayer transport structures. We have used thin SiO(2) overlayers to control the effective energy and dose of Ga ions at the Pt/Co interface. The extraordinary Hall effect (EHE) was used to characterize the magnetic properties of the patterned films. Using 30 keV Ga ions and SiO(2) overlayer thicknesses in the range of 0-24 nm, we achieve complete control of the coercive field of our Pt/Co/Pt trilayer structures. The magnetization reversal mechanism for an artificial domain of size of 3x0.5 mu m(2) is investigated using EHE. (c) 2005 American Institute of Physics.