Research output: Contribution to Journal/Magazine › Journal article › peer-review
| Article number | 124102 |
|---|---|
| <mark>Journal publication date</mark> | 15/12/2005 |
| <mark>Journal</mark> | Journal of Applied Physics |
| Issue number | 12 |
| Volume | 98 |
| Number of pages | 4 |
| Publication Status | Published |
| <mark>Original language</mark> | English |
We demonstrate that a high-resolution Ga focused ion beam can be used to introduce artificial domain structures in Pt(1.6 nm)/Co(0.5 nm)/Pt(3.5 nm) trilayer transport structures. We have used thin SiO(2) overlayers to control the effective energy and dose of Ga ions at the Pt/Co interface. The extraordinary Hall effect (EHE) was used to characterize the magnetic properties of the patterned films. Using 30 keV Ga ions and SiO(2) overlayer thicknesses in the range of 0-24 nm, we achieve complete control of the coercive field of our Pt/Co/Pt trilayer structures. The magnetization reversal mechanism for an artificial domain of size of 3x0.5 mu m(2) is investigated using EHE. (c) 2005 American Institute of Physics.