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Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102. / Aziz, A; Bending, SJ; Roberts, H et al.
In: Journal of Applied Physics, Vol. 98, No. 12, 124102, 15.12.2005.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Aziz, A, Bending, SJ, Roberts, H, Crampin, S, Heard, PJ & Marrows, CH 2005, 'Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102', Journal of Applied Physics, vol. 98, no. 12, 124102. https://doi.org/10.1063/1.2149500

APA

Aziz, A., Bending, SJ., Roberts, H., Crampin, S., Heard, PJ., & Marrows, CH. (2005). Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102. Journal of Applied Physics, 98(12), Article 124102. https://doi.org/10.1063/1.2149500

Vancouver

Aziz A, Bending SJ, Roberts H, Crampin S, Heard PJ, Marrows CH. Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102. Journal of Applied Physics. 2005 Dec 15;98(12):124102. doi: 10.1063/1.2149500

Author

Aziz, A ; Bending, SJ ; Roberts, H et al. / Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102. In: Journal of Applied Physics. 2005 ; Vol. 98, No. 12.

Bibtex

@article{150a40cce5ec4c01b1820bead0cf2362,
title = "Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102",
abstract = "We demonstrate that a high-resolution Ga focused ion beam can be used to introduce artificial domain structures in Pt(1.6 nm)/Co(0.5 nm)/Pt(3.5 nm) trilayer transport structures. We have used thin SiO(2) overlayers to control the effective energy and dose of Ga ions at the Pt/Co interface. The extraordinary Hall effect (EHE) was used to characterize the magnetic properties of the patterned films. Using 30 keV Ga ions and SiO(2) overlayer thicknesses in the range of 0-24 nm, we achieve complete control of the coercive field of our Pt/Co/Pt trilayer structures. The magnetization reversal mechanism for an artificial domain of size of 3x0.5 mu m(2) is investigated using EHE. (c) 2005 American Institute of Physics.",
keywords = "MAGNETIC-PROPERTIES, MEDIA, IRRADIATION, CO/PT MULTILAYERS, LAYERS, ANISOTROPY",
author = "A Aziz and SJ Bending and H Roberts and S Crampin and PJ Heard and CH Marrows",
year = "2005",
month = dec,
day = "15",
doi = "10.1063/1.2149500",
language = "English",
volume = "98",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "12",

}

RIS

TY - JOUR

T1 - Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102

AU - Aziz, A

AU - Bending, SJ

AU - Roberts, H

AU - Crampin, S

AU - Heard, PJ

AU - Marrows, CH

PY - 2005/12/15

Y1 - 2005/12/15

N2 - We demonstrate that a high-resolution Ga focused ion beam can be used to introduce artificial domain structures in Pt(1.6 nm)/Co(0.5 nm)/Pt(3.5 nm) trilayer transport structures. We have used thin SiO(2) overlayers to control the effective energy and dose of Ga ions at the Pt/Co interface. The extraordinary Hall effect (EHE) was used to characterize the magnetic properties of the patterned films. Using 30 keV Ga ions and SiO(2) overlayer thicknesses in the range of 0-24 nm, we achieve complete control of the coercive field of our Pt/Co/Pt trilayer structures. The magnetization reversal mechanism for an artificial domain of size of 3x0.5 mu m(2) is investigated using EHE. (c) 2005 American Institute of Physics.

AB - We demonstrate that a high-resolution Ga focused ion beam can be used to introduce artificial domain structures in Pt(1.6 nm)/Co(0.5 nm)/Pt(3.5 nm) trilayer transport structures. We have used thin SiO(2) overlayers to control the effective energy and dose of Ga ions at the Pt/Co interface. The extraordinary Hall effect (EHE) was used to characterize the magnetic properties of the patterned films. Using 30 keV Ga ions and SiO(2) overlayer thicknesses in the range of 0-24 nm, we achieve complete control of the coercive field of our Pt/Co/Pt trilayer structures. The magnetization reversal mechanism for an artificial domain of size of 3x0.5 mu m(2) is investigated using EHE. (c) 2005 American Institute of Physics.

KW - MAGNETIC-PROPERTIES

KW - MEDIA

KW - IRRADIATION

KW - CO/PT MULTILAYERS

KW - LAYERS

KW - ANISOTROPY

U2 - 10.1063/1.2149500

DO - 10.1063/1.2149500

M3 - Journal article

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 124102

ER -