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Asymmetry gap in the electronic band structure of bilayer graphene.

Research output: Contribution to journalJournal article

Published
<mark>Journal publication date</mark>10/2006
<mark>Journal</mark>Physical Review B
Issue number16
Volume74
Pages (from-to)161403
<mark>State</mark>Published
<mark>Original language</mark>English

Abstract

A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap U between the conduction and valence bands. In particular, a self consistent Hartree approximation is used to describe imperfect screening of an external gate, employed primarily to control the density n of electrons on the bilayer, resulting in a potential difference between the layers and a density dependent gap U(n). We discuss the influence of a finite asymmetry gap U(0) at zero excess density, caused by the screening of an additional transverse electric field, on observations of the quantum Hall effect.