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Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

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Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design. / Gubicza, Agnes; Manrique, David; Posa, Laszlo et al.
In: Scientific Reports, Vol. 6, 30775, 04.08.2016.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Gubicza, A, Manrique, D, Posa, L, Lambert, CJ, Mihály, G, Csontos, M & Halbritter, A 2016, 'Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design', Scientific Reports, vol. 6, 30775. https://doi.org/10.1038/srep30775

APA

Gubicza, A., Manrique, D., Posa, L., Lambert, C. J., Mihály, G., Csontos, M., & Halbritter, A. (2016). Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design. Scientific Reports, 6, Article 30775. https://doi.org/10.1038/srep30775

Vancouver

Gubicza A, Manrique D, Posa L, Lambert CJ, Mihály G, Csontos M et al. Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design. Scientific Reports. 2016 Aug 4;6:30775. doi: 10.1038/srep30775

Author

Gubicza, Agnes ; Manrique, David ; Posa, Laszlo et al. / Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design. In: Scientific Reports. 2016 ; Vol. 6.

Bibtex

@article{5029007c4f5045f4a56c7aadad89c3bf,
title = "Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design",
abstract = "Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.",
author = "Agnes Gubicza and David Manrique and Laszlo Posa and Lambert, {Colin John} and Gy{\"o}rgy Mih{\'a}ly and Mikl{\'o}s Csontos and Andras Halbritter",
year = "2016",
month = aug,
day = "4",
doi = "10.1038/srep30775",
language = "English",
volume = "6",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

AU - Gubicza, Agnes

AU - Manrique, David

AU - Posa, Laszlo

AU - Lambert, Colin John

AU - Mihály, György

AU - Csontos, Miklós

AU - Halbritter, Andras

PY - 2016/8/4

Y1 - 2016/8/4

N2 - Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.

AB - Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.

U2 - 10.1038/srep30775

DO - 10.1038/srep30775

M3 - Journal article

VL - 6

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 30775

ER -