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Automatic Optimization of a Klystron Interaction Structure

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Automatic Optimization of a Klystron Interaction Structure. / Lingwood, Christopher; Burt, Graeme; Gunn, Kester et al.
In: IEEE Transactions on Electron Devices, Vol. 60, No. 8, 08.2013, p. 2671-2676 .

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Lingwood, C, Burt, G, Gunn, K, Carter, R, Marchesin, R & Jensen, E 2013, 'Automatic Optimization of a Klystron Interaction Structure', IEEE Transactions on Electron Devices, vol. 60, no. 8, pp. 2671-2676 . https://doi.org/10.1109/TED.2013.2270975

APA

Lingwood, C., Burt, G., Gunn, K., Carter, R., Marchesin, R., & Jensen, E. (2013). Automatic Optimization of a Klystron Interaction Structure. IEEE Transactions on Electron Devices, 60(8), 2671-2676 . https://doi.org/10.1109/TED.2013.2270975

Vancouver

Lingwood C, Burt G, Gunn K, Carter R, Marchesin R, Jensen E. Automatic Optimization of a Klystron Interaction Structure. IEEE Transactions on Electron Devices. 2013 Aug;60(8):2671-2676 . doi: 10.1109/TED.2013.2270975

Author

Lingwood, Christopher ; Burt, Graeme ; Gunn, Kester et al. / Automatic Optimization of a Klystron Interaction Structure. In: IEEE Transactions on Electron Devices. 2013 ; Vol. 60, No. 8. pp. 2671-2676 .

Bibtex

@article{cfbd571bebca48a09c5da0dbb18ae5a0,
title = "Automatic Optimization of a Klystron Interaction Structure",
abstract = "The design of klystrons has long been a manual process guided by experience. However, with well-defined specifications and sufficiently rapid simulation methods, it is a good candidate process for automatic optimization techniques. In this paper, such a technique is evaluated and refined using klystron specific techniques, leading to several designs (with different tradeoffs between efficiency and size) each of a structure comparable with the SLAC B-factory klystrons. The most efficient of which, while only 1% more efficient, is 17.1% shorter.",
keywords = "Efficiency, evolutionary algorithm (EA), interaction structure, klystron, klystron design, optimization",
author = "Christopher Lingwood and Graeme Burt and Kester Gunn and Richard Carter and Rodolphe Marchesin and Erk Jensen",
year = "2013",
month = aug,
doi = "10.1109/TED.2013.2270975",
language = "English",
volume = "60",
pages = "2671--2676 ",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

RIS

TY - JOUR

T1 - Automatic Optimization of a Klystron Interaction Structure

AU - Lingwood, Christopher

AU - Burt, Graeme

AU - Gunn, Kester

AU - Carter, Richard

AU - Marchesin, Rodolphe

AU - Jensen, Erk

PY - 2013/8

Y1 - 2013/8

N2 - The design of klystrons has long been a manual process guided by experience. However, with well-defined specifications and sufficiently rapid simulation methods, it is a good candidate process for automatic optimization techniques. In this paper, such a technique is evaluated and refined using klystron specific techniques, leading to several designs (with different tradeoffs between efficiency and size) each of a structure comparable with the SLAC B-factory klystrons. The most efficient of which, while only 1% more efficient, is 17.1% shorter.

AB - The design of klystrons has long been a manual process guided by experience. However, with well-defined specifications and sufficiently rapid simulation methods, it is a good candidate process for automatic optimization techniques. In this paper, such a technique is evaluated and refined using klystron specific techniques, leading to several designs (with different tradeoffs between efficiency and size) each of a structure comparable with the SLAC B-factory klystrons. The most efficient of which, while only 1% more efficient, is 17.1% shorter.

KW - Efficiency

KW - evolutionary algorithm (EA)

KW - interaction structure

KW - klystron

KW - klystron design

KW - optimization

U2 - 10.1109/TED.2013.2270975

DO - 10.1109/TED.2013.2270975

M3 - Journal article

VL - 60

SP - 2671

EP - 2676

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 8

ER -