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Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

Research output: Contribution to journalJournal article

Published

Journal publication date06/2011
JournalIeee journal of quantum electronics
Journal number6
Volume47
Number of pages7
Pages858-864
Original languageEnglish

Abstract

The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.