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Avalanche Multiplication and Excess Noise in InAs Electron Avalanche Photodiodes at 77 K

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>06/2011
<mark>Journal</mark>IEEE Journal of Quantum Electronics
Issue number6
Number of pages7
Pages (from-to)858-864
<mark>Original language</mark>English


The findings of a study of impact ionization, avalanche multiplication and excess noise in InAs avalanche photodiodes at 77 K are reported. It is shown that hole impact ionization is negligible in practical devices which continue to operate as electron avalanche photodiodes, as they do at room temperature. A new electron ionization coefficient capable of modeling multiplication at 77 K is presented and it is shown that significant multiplication can be achieved in practical devices without excessive tunneling currents. The characteristic changes observed between room temperature and 77 K are discussed. This paper helps to demonstrate the potential for practical InAs electron avalanche photodiodes, operating cooled.