Home > Research > Publications & Outputs > Avalanche multiplication in InAlAs
View graph of relations

Avalanche multiplication in InAlAs

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Published

Standard

Avalanche multiplication in InAlAs. / Goh, Y. L.; Massey, D. J.; Marshall, A. R. J. et al.
In: IEEE Transactions on Electron Devices, Vol. 54, No. 1, 01.2007, p. 11-16.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Goh, YL, Massey, DJ, Marshall, ARJ, Ng, JS, Tan, CH, Ng, WK, Rees, GJ, Hopkinson, A, David, JPR & Jones, SK 2007, 'Avalanche multiplication in InAlAs', IEEE Transactions on Electron Devices, vol. 54, no. 1, pp. 11-16. https://doi.org/10.1109/TED.2006.887229

APA

Goh, Y. L., Massey, D. J., Marshall, A. R. J., Ng, J. S., Tan, C. H., Ng, W. K., Rees, G. J., Hopkinson, A., David, J. P. R., & Jones, S. K. (2007). Avalanche multiplication in InAlAs. IEEE Transactions on Electron Devices, 54(1), 11-16. https://doi.org/10.1109/TED.2006.887229

Vancouver

Goh YL, Massey DJ, Marshall ARJ, Ng JS, Tan CH, Ng WK et al. Avalanche multiplication in InAlAs. IEEE Transactions on Electron Devices. 2007 Jan;54(1):11-16. doi: 10.1109/TED.2006.887229

Author

Goh, Y. L. ; Massey, D. J. ; Marshall, A. R. J. et al. / Avalanche multiplication in InAlAs. In: IEEE Transactions on Electron Devices. 2007 ; Vol. 54, No. 1. pp. 11-16.

Bibtex

@article{d74836bfa9dd4756b0890c31898bd27e,
title = "Avalanche multiplication in InAlAs",
abstract = "A systematic study of avalanche multiplication on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mu m has been used to deduce effective ionization coefficients between 220 and 980 kV (.) cm(-1). The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mu m-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique.",
keywords = "Avalanche photodiodes (APDs) , impact ionization , ionization coefficients , multiplication",
author = "Goh, {Y. L.} and Massey, {D. J.} and Marshall, {A. R. J.} and Ng, {J. S.} and Tan, {C. H.} and Ng, {W. K.} and Rees, {G. J.} and A. Hopkinson and David, {J. P. R.} and Jones, {S. K.}",
year = "2007",
month = jan,
doi = "10.1109/TED.2006.887229",
language = "English",
volume = "54",
pages = "11--16",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

RIS

TY - JOUR

T1 - Avalanche multiplication in InAlAs

AU - Goh, Y. L.

AU - Massey, D. J.

AU - Marshall, A. R. J.

AU - Ng, J. S.

AU - Tan, C. H.

AU - Ng, W. K.

AU - Rees, G. J.

AU - Hopkinson, A.

AU - David, J. P. R.

AU - Jones, S. K.

PY - 2007/1

Y1 - 2007/1

N2 - A systematic study of avalanche multiplication on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mu m has been used to deduce effective ionization coefficients between 220 and 980 kV (.) cm(-1). The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mu m-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique.

AB - A systematic study of avalanche multiplication on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal intrinsic region thicknesses ranging from 0.1 to 2.5 mu m has been used to deduce effective ionization coefficients between 220 and 980 kV (.) cm(-1). The electron and hole ionization coefficient ratio varies from 32.6 to 1.2 with increasing field. Tunneling begins to dominate the bulk current prior to avalanche breakdown in the 0.1-mu m-thick structure, imposing an upper limit to the operating field. While the local model can accurately predict the breakdown in the diodes, multiplication is overestimated at low fields. The effects of ionization dead space, which becomes more significant as the intrinsic region thickness reduces, can be corrected for by using a simple correction technique.

KW - Avalanche photodiodes (APDs)

KW - impact ionization

KW - ionization coefficients

KW - multiplication

U2 - 10.1109/TED.2006.887229

DO - 10.1109/TED.2006.887229

M3 - Journal article

VL - 54

SP - 11

EP - 16

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 1

ER -