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Ballistic transport effects in a sub-micron InSb quantum well cross structure

Research output: Contribution to Journal/Magazine › Journal article › peer-review

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Ballistic transport effects in a sub-micron InSb quantum well cross structure. / Gilbertson, A. M.; Fearn, M.; Kormanyos, A. et al.
In: AIP Conference Proceedings, Vol. 1399, 2011, p. 325-326.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Gilbertson, AM, Fearn, M, Kormanyos, A, Read, DE, Lambert, CJ, Buckle, L, Ashley, T, Solin, SA & Cohen, LF 2011, 'Ballistic transport effects in a sub-micron InSb quantum well cross structure', AIP Conference Proceedings, vol. 1399, pp. 325-326. https://doi.org/10.1063/1.3666385

APA

Gilbertson, A. M., Fearn, M., Kormanyos, A., Read, D. E., Lambert, C. J., Buckle, L., Ashley, T., Solin, S. A., & Cohen, L. F. (2011). Ballistic transport effects in a sub-micron InSb quantum well cross structure. AIP Conference Proceedings, 1399, 325-326. https://doi.org/10.1063/1.3666385

Vancouver

Gilbertson AM, Fearn M, Kormanyos A, Read DE, Lambert CJ, Buckle L et al. Ballistic transport effects in a sub-micron InSb quantum well cross structure. AIP Conference Proceedings. 2011;1399:325-326. Epub 2011 Dec 23. doi: 10.1063/1.3666385

Author

Gilbertson, A. M. ; Fearn, M. ; Kormanyos, A. et al. / Ballistic transport effects in a sub-micron InSb quantum well cross structure. In: AIP Conference Proceedings. 2011 ; Vol. 1399. pp. 325-326.

Bibtex

@article{a5bb7ef1293a42428a4d1fd4e5dc287c,
title = "Ballistic transport effects in a sub-micron InSb quantum well cross structure",
abstract = "We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.",
keywords = "Ballistic transport, InSb, quantum well",
author = "Gilbertson, {A. M.} and M. Fearn and A. Kormanyos and Read, {D. E.} and Lambert, {C. J.} and L. Buckle and T. Ashley and Solin, {S. A.} and Cohen, {L. F.}",
year = "2011",
doi = "10.1063/1.3666385",
language = "English",
volume = "1399",
pages = "325--326",
journal = "AIP Conference Proceedings",
issn = "0094-243X",
publisher = "American Institute of Physics Publising LLC",
note = "30th International Conference on the Physics of Semiconductors (ICPS-30) ; Conference date: 25-07-2010 Through 30-07-2010",

}

RIS

TY - JOUR

T1 - Ballistic transport effects in a sub-micron InSb quantum well cross structure

AU - Gilbertson, A. M.

AU - Fearn, M.

AU - Kormanyos, A.

AU - Read, D. E.

AU - Lambert, C. J.

AU - Buckle, L.

AU - Ashley, T.

AU - Solin, S. A.

AU - Cohen, L. F.

PY - 2011

Y1 - 2011

N2 - We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.

AB - We report the low temperature magnetoresistance properties of an InSb quantum well sub-micron Hall cross with lateral dimensions of 477 nm and active device dimensions of the order of 340 nm. Ballistic transport anomalies are observed in the low field regime including negative bend resistance. The use of such devices as high spatial resolution low field sensors is addressed.

KW - Ballistic transport

KW - InSb

KW - quantum well

U2 - 10.1063/1.3666385

DO - 10.1063/1.3666385

M3 - Journal article

VL - 1399

SP - 325

EP - 326

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

SN - 0094-243X

T2 - 30th International Conference on the Physics of Semiconductors (ICPS-30)

Y2 - 25 July 2010 through 30 July 2010

ER -