Home > Research > Publications & Outputs > Binding energies of trions and biexcitons in tw...

Electronic data

  • Trionpaper_v9

    Rights statement: © 2017 American Physical Society

    Accepted author manuscript, 601 KB, PDF-document

    Available under license: CC BY: Creative Commons Attribution 4.0 International License

Links

Text available via DOI:

View graph of relations

Binding energies of trions and biexcitons in two-dimensional semiconductors from diffusion quantum Monte Carlo calculations

Research output: Contribution to journalJournal article

Published
Article number081301
<mark>Journal publication date</mark>15/02/2017
<mark>Journal</mark>Physical Review B
Volume95
Number of pages5
<mark>State</mark>Published
Early online date7/02/17
<mark>Original language</mark>English

Abstract

Excitonic effects play a particularly important role in the optoelectronic behavior of two-dimensional (2D) semiconductors. To facilitate the interpretation of experimental photoabsorption and photoluminescence spectra we provide statistically exact diffusion quantum Monte Carlo binding-energy data for Mott-Wannier models of excitons, trions, and biexcitons in 2D semiconductors. We also provide contact pair densities to allow a description of contact (exchange) interactions between charge carriers using first-order perturbation theory. Our data indicate that the binding energy of a trion is generally larger than that of a biexciton in 2D semiconductors. We provide interpolation formulas giving the binding energy and contact density of 2D semiconductors as functions of the electron and hole effective masses and the in-plane polarizability.

Bibliographic note

© 2017 American Physical Society