Home > Research > Publications & Outputs > Characterisation of InAs/GaAs quantum dots inte...
View graph of relations

Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

Research output: Contribution to journalJournal article

Published
Close
<mark>Journal publication date</mark>04/2014
<mark>Journal</mark>IET Optoelectronics
Issue number2
Volume8
Number of pages5
Pages (from-to)71-75
Publication statusPublished
Early online date25/02/14
Original languageEnglish

Abstract

The authors report on the structural, the optical and the electrical properties of solar cells containing 20 layers of doped InAs/GaAs quantum dots (QDs). The structures were grown by molecular beam epitaxy and contain n dopant sheet densities of 8 and 16 × 1010cm−2, respectively, in between the QD layers. Under a 1 sun illumination, the open-circuit voltage (V oc) and the efficiency of the 8 × 1010cm−2 n-doped sample were increased to values of 0.73 V and 9.7%, respectively, compared with a reference undoped sample (a V oc of 0.70 V and an efficiency of 9.0%). However, the short-circuit current density (J sc) decreased from 20.1 to 17.4 mA/cm2 indicating bandfilling within the QD array.