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Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

Publication date2001
Host publicationMicroscopy of Semiconducting Materials 2001
EditorsA. G. Cullis, J. L. Hutchison
Place of publicationBristol
PublisherIOP Publishing Ltd
Pages531-534
Number of pages4
ISBN (Print)0-7503-0818-4
Original languageEnglish

Conference

ConferenceRoyal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
CityOXFORD
Period25/03/0129/03/01

Conference

ConferenceRoyal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
CityOXFORD
Period25/03/0129/03/01

Abstract

Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.