Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy

Physics

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Published

Standard

Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy. / Huey, B. D. ; Langford, R. M. ; Briggs, G. Andrew D. et al.
Microscopy of Semiconducting Materials 2001. ed. / A. G. Cullis; J. L. Hutchison. Bristol: IOP Publishing Ltd, 2001. p. 531-534.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Huey, BD, Langford, RM, Briggs, GAD & Kolosov, O 2001, Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy. in AG Cullis & JL Hutchison (eds), Microscopy of Semiconducting Materials 2001. IOP Publishing Ltd, Bristol, pp. 531-534, Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials, OXFORD, 25/03/01.

APA

Huey, B. D., Langford, R. M., Briggs, G. A. D., & Kolosov, O. (2001). Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy. In A. G. Cullis, & J. L. Hutchison (Eds.), Microscopy of Semiconducting Materials 2001 (pp. 531-534). IOP Publishing Ltd.

Vancouver

Huey BD, Langford RM, Briggs GAD, Kolosov O. Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy. In Cullis AG, Hutchison JL, editors, Microscopy of Semiconducting Materials 2001. Bristol: IOP Publishing Ltd. 2001. p. 531-534

Author

Huey, B. D. ; Langford, R. M. ; Briggs, G. Andrew D. et al. / Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy. Microscopy of Semiconducting Materials 2001. editor / A. G. Cullis ; J. L. Hutchison. Bristol : IOP Publishing Ltd, 2001. pp. 531-534

Bibtex

@inproceedings{f46d6d586b9f4018a9ec6ea2b30b21cf,

title = "Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy",

abstract = "Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.",

author = "Huey, {B. D.} and Langford, {R. M.} and Briggs, {G. Andrew D.} and Oleg Kolosov",

year = "2001",

language = "English",

isbn = "0-7503-0818-4",

pages = "531--534",

editor = "Cullis, {A. G.} and Hutchison, {J. L.}",

booktitle = "Microscopy of Semiconducting Materials 2001",

publisher = "IOP Publishing Ltd",

note = "Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials ; Conference date: 25-03-2001 Through 29-03-2001",

}

RIS

TY - GEN

T1 - Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy

AU - Huey, B. D.

AU - Langford, R. M.

AU - Briggs, G. Andrew D.

AU - Kolosov, Oleg

PY - 2001

Y1 - 2001

N2 - Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.

AB - Ultrasonic Force Microscopy (UFM) has been applied to detect the mechanical compliance of semiconductors at the nanometer (nm) scale. UFM of Si and SiGe heterostructures reveals a sensitivity to 2.5 nm thin films. Structures and damage generated during implantation and milling of Si with a focused ion beam are also characterized. This provides novel insight into the topographic and mechanical consequences of ion implantation for doses down to 10(14) ions/cm(2). The experimental results for both SiGe films and ion milled Si wafers are supported by simulations of the UFM technique.

M3 - Conference contribution/Paper

SN - 0-7503-0818-4

SP - 531

EP - 534

BT - Microscopy of Semiconducting Materials 2001

A2 - Cullis, A. G.

A2 - Hutchison, J. L.

PB - IOP Publishing Ltd

CY - Bristol

T2 - Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials

Y2 - 25 March 2001 through 29 March 2001

ER -

Research