Rights statement: This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, 435, 2016 DOI: 10.1016/j.jcrysgro.2015.11.025
Accepted author manuscript, 0.99 MB, PDF document
Available under license: CC BY-NC-ND: Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
Final published version
Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy
AU - Craig, Adam
AU - Carrington, Peter James
AU - Liu, Huiyun
AU - Marshall, Andrew Robert Julian
N1 - This is the author’s version of a work that was accepted for publication in Journal of Crystal Growth. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Crystal Growth, 435, 2016 DOI: 10.1016/j.jcrysgro.2015.11.025
PY - 2016/2/1
Y1 - 2016/2/1
N2 - GaSb p–i–n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.
AB - GaSb p–i–n photodiodes were grown on GaAs and Si, using interfacial misfit arrays, and on native GaSb. For the samples grown on GaAs and Si, high-resolution transmission electron microscopy images revealed interface atomic periodicities in agreement with atomistic modeling. Surface defect densities of ~View the MathML source were measured for both samples. Atomic force microscopy scans revealed surface roughnesses of around 1.6 nm, compared with 0.5 nm for the sample grown on native GaSb. Dark current and spectral response measurements were used to study the electrical and optoelectronic properties of all three samples.
U2 - 10.1016/j.jcrysgro.2015.11.025
DO - 10.1016/j.jcrysgro.2015.11.025
M3 - Journal article
VL - 435
SP - 56
EP - 61
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -