We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK


97% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Characterization of InAs0.91Sb0.09 for use in m...
View graph of relations

« Back

Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

Research output: Contribution to journalJournal article


<mark>Journal publication date</mark>06/2007
<mark>Journal</mark>Semiconductor Science and Technology
Number of pages5
<mark>Original language</mark>English


The liquid phase epitaxial growth of InAs0.91Sb0.09 lattice-matched onto GaSb is reported for use in the active region of a mid-infrared light-emitting diode. Epitaxy was carried out from Sb-rich solution using Gd gettering to purify the material. The photoluminescence and electroluminescence emission spectra were studied over the temperature range 4–300 K using different excitation intensities. Interpretation of the resulting spectra revealed the existence of two acceptor levels with activation energies of 8 meV and 16 meV. Room temperature electroluminescence at 4.2 µm was readily obtained from homo-junction p–i–n diodes fabricated from this material. The temperature dependence of the electroluminescence was studied and the decrease in the radiative recombination coefficient was found to be primarily responsible for the luminescence quenching.