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Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

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Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. . / Krier, A.; Stone, M.; Krier, S. E.
In: Semiconductor Science and Technology, Vol. 22, No. 6, 06.2007, p. 624-628.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A, Stone, M & Krier, SE 2007, 'Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .', Semiconductor Science and Technology, vol. 22, no. 6, pp. 624-628. https://doi.org/10.1088/0268-1242/22/6/007

APA

Krier, A., Stone, M., & Krier, S. E. (2007). Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. . Semiconductor Science and Technology, 22(6), 624-628. https://doi.org/10.1088/0268-1242/22/6/007

Vancouver

Krier A, Stone M, Krier SE. Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. . Semiconductor Science and Technology. 2007 Jun;22(6):624-628. doi: 10.1088/0268-1242/22/6/007

Author

Krier, A. ; Stone, M. ; Krier, S. E. / Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. . In: Semiconductor Science and Technology. 2007 ; Vol. 22, No. 6. pp. 624-628.

Bibtex

@article{a27f017b292d41de856a07b4dcb922aa,
title = "Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .",
abstract = "The liquid phase epitaxial growth of InAs0.91Sb0.09 lattice-matched onto GaSb is reported for use in the active region of a mid-infrared light-emitting diode. Epitaxy was carried out from Sb-rich solution using Gd gettering to purify the material. The photoluminescence and electroluminescence emission spectra were studied over the temperature range 4–300 K using different excitation intensities. Interpretation of the resulting spectra revealed the existence of two acceptor levels with activation energies of 8 meV and 16 meV. Room temperature electroluminescence at 4.2 µm was readily obtained from homo-junction p–i–n diodes fabricated from this material. The temperature dependence of the electroluminescence was studied and the decrease in the radiative recombination coefficient was found to be primarily responsible for the luminescence quenching.",
author = "A. Krier and M. Stone and Krier, {S. E.}",
year = "2007",
month = jun,
doi = "10.1088/0268-1242/22/6/007",
language = "English",
volume = "22",
pages = "624--628",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "6",

}

RIS

TY - JOUR

T1 - Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution. .

AU - Krier, A.

AU - Stone, M.

AU - Krier, S. E.

PY - 2007/6

Y1 - 2007/6

N2 - The liquid phase epitaxial growth of InAs0.91Sb0.09 lattice-matched onto GaSb is reported for use in the active region of a mid-infrared light-emitting diode. Epitaxy was carried out from Sb-rich solution using Gd gettering to purify the material. The photoluminescence and electroluminescence emission spectra were studied over the temperature range 4–300 K using different excitation intensities. Interpretation of the resulting spectra revealed the existence of two acceptor levels with activation energies of 8 meV and 16 meV. Room temperature electroluminescence at 4.2 µm was readily obtained from homo-junction p–i–n diodes fabricated from this material. The temperature dependence of the electroluminescence was studied and the decrease in the radiative recombination coefficient was found to be primarily responsible for the luminescence quenching.

AB - The liquid phase epitaxial growth of InAs0.91Sb0.09 lattice-matched onto GaSb is reported for use in the active region of a mid-infrared light-emitting diode. Epitaxy was carried out from Sb-rich solution using Gd gettering to purify the material. The photoluminescence and electroluminescence emission spectra were studied over the temperature range 4–300 K using different excitation intensities. Interpretation of the resulting spectra revealed the existence of two acceptor levels with activation energies of 8 meV and 16 meV. Room temperature electroluminescence at 4.2 µm was readily obtained from homo-junction p–i–n diodes fabricated from this material. The temperature dependence of the electroluminescence was studied and the decrease in the radiative recombination coefficient was found to be primarily responsible for the luminescence quenching.

U2 - 10.1088/0268-1242/22/6/007

DO - 10.1088/0268-1242/22/6/007

M3 - Journal article

VL - 22

SP - 624

EP - 628

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 6

ER -