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Charge separation and temperature-induced carrier migration in Ga1−x Inx N y As1− y multiple quantum wells

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  • Thomas Nuytten
  • Manus Hayne
  • Bhavtosh Bansal
  • H. Y. Liu
  • Mark Hopkinson
  • Victor V. Moshchalkov
Article number045302
<mark>Journal publication date</mark>5/07/2011
<mark>Journal</mark>Physical review B
Publication StatusPublished
<mark>Original language</mark>English


We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga1−xInxNyAs1−y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature and excitation power. The observation of a nonmonotonic dependence of the PL energy on temperature indicates that localized states dominate the luminescence at low temperature, while magneto-PL experiments give new insights into the nature of the localization. We find that the low-temperature spatial distribution of carriers in the quantum well is different for electrons and holes because they are captured by different disorder-induced complexes that are spatially separated. A study of the thermalization of the carriers toward free states leads to the determination of the free-exciton wave-function extent in these systems and enables an assessment of the localization potentials induced by inhomogeneity in the quantum well.