Classification and control of the origin of photoluminescence from Si nanocrystals.

Physics

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Classification and control of the origin of photoluminescence from Si nanocrystals. / Godefroo, Stefanie; Hayne, Manus; Jivanescu, Michaela et al.
In: Nature Nanotechnology, Vol. 3, No. 3, 02.03.2008, p. 174-178.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Godefroo, S, Hayne, M, Jivanescu, M, Stesmans, A, Zacharias, M, Lededev, O, Van Tendeloo, G & Moshchalkov, VV 2008, 'Classification and control of the origin of photoluminescence from Si nanocrystals.', Nature Nanotechnology, vol. 3, no. 3, pp. 174-178. https://doi.org/10.1038/nnano.2008.7

APA

Godefroo, S., Hayne, M., Jivanescu, M., Stesmans, A., Zacharias, M., Lededev, O., Van Tendeloo, G., & Moshchalkov, V. V. (2008). Classification and control of the origin of photoluminescence from Si nanocrystals. Nature Nanotechnology, 3(3), 174-178. https://doi.org/10.1038/nnano.2008.7

Vancouver

Godefroo S, Hayne M, Jivanescu M, Stesmans A, Zacharias M, Lededev O et al. Classification and control of the origin of photoluminescence from Si nanocrystals. Nature Nanotechnology. 2008 Mar 2;3(3):174-178. doi: 10.1038/nnano.2008.7

Author

Godefroo, Stefanie ; Hayne, Manus ; Jivanescu, Michaela et al. / Classification and control of the origin of photoluminescence from Si nanocrystals. In: Nature Nanotechnology. 2008 ; Vol. 3, No. 3. pp. 174-178.

Bibtex

@article{a64742cde90f4f4cb1f36c291cf74a45,

title = "Classification and control of the origin of photoluminescence from Si nanocrystals.",

abstract = "Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again.",

keywords = "Si nanocrystals, photoluminescence",

author = "Stefanie Godefroo and Manus Hayne and Michaela Jivanescu and Andre Stesmans and Margit Zacharias and Oleg Lededev and {Van Tendeloo}, Gustaaf and Moshchalkov, {Victor V.}",

note = "See also Nature Research Highlights: http://www.nature.com/nature/journal/v452/n7183/full/452004a.html Nature Nanotechnology 'News and Views': http://dx.doi.org/10.1038/nnano.2008.40",

year = "2008",

month = mar,

day = "2",

doi = "10.1038/nnano.2008.7",

language = "English",

volume = "3",

pages = "174--178",

journal = "Nature Nanotechnology",

issn = "1748-3387",

publisher = "Nature Publishing Group",

number = "3",

}

RIS

TY - JOUR

T1 - Classification and control of the origin of photoluminescence from Si nanocrystals.

AU - Godefroo, Stefanie

AU - Hayne, Manus

AU - Jivanescu, Michaela

AU - Stesmans, Andre

AU - Zacharias, Margit

AU - Lededev, Oleg

AU - Van Tendeloo, Gustaaf

AU - Moshchalkov, Victor V.

N1 - See also Nature Research Highlights: http://www.nature.com/nature/journal/v452/n7183/full/452004a.html Nature Nanotechnology 'News and Views': http://dx.doi.org/10.1038/nnano.2008.40

PY - 2008/3/2

Y1 - 2008/3/2

N2 - Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again.

AB - Silicon dominates the electronics industry, but its poor optical properties mean that III–V compound semiconductors are preferred for photonics applications. Photoluminescence at visible wavelengths was observed from porous Si at room temperature in 1990, but the origin of these photons (do they arise from highly localized defect states or quantum confinement effects?) has been the subject of intense debate ever since. Attention has subsequently shifted from porous Si to Si nanocrystals, but the same fundamental question about the origin of the photoluminescence has remained. Here we show, based on measurements in high magnetic fields, that defects are the dominant source of light from Si nanocrystals. Moreover, we show that it is possible to control the origin of the photoluminescence in a single sample: passivation with hydrogen removes the defects, resulting in photoluminescence from quantum-confined states, but subsequent ultraviolet illumination reintroduces the defects, making them the origin of the light again.

KW - Si nanocrystals

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=40449133560&partnerID=8YFLogxK

U2 - 10.1038/nnano.2008.7

DO - 10.1038/nnano.2008.7

M3 - Journal article

VL - 3

SP - 174

EP - 178

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

IS - 3

ER -

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