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Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures. / Tilka, J. A.; Park, J.; Ahn, Y. et al.
In: Journal of Applied Physics, Vol. 120, 015304, 06.07.2016.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Tilka, JA, Park, J, Ahn, Y, Pateras, A, Sampson, KC, Savage, DE, Prance, JR, Simmons, CB, Coppersmith, SN, Eriksson, MA, Lagally, MG, Holt, MV & Evans, PG 2016, 'Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures', Journal of Applied Physics, vol. 120, 015304. https://doi.org/10.1063/1.4955043

APA

Tilka, J. A., Park, J., Ahn, Y., Pateras, A., Sampson, K. C., Savage, D. E., Prance, J. R., Simmons, C. B., Coppersmith, S. N., Eriksson, M. A., Lagally, M. G., Holt, M. V., & Evans, P. G. (2016). Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures. Journal of Applied Physics, 120, Article 015304. https://doi.org/10.1063/1.4955043

Vancouver

Tilka JA, Park J, Ahn Y, Pateras A, Sampson KC, Savage DE et al. Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures. Journal of Applied Physics. 2016 Jul 6;120:015304. doi: 10.1063/1.4955043

Author

Tilka, J. A. ; Park, J. ; Ahn, Y. et al. / Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures. In: Journal of Applied Physics. 2016 ; Vol. 120.

Bibtex

@article{fac88af6bcae4c29828ed2bb1c8e3f1e,
title = "Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures",
abstract = "The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.",
author = "Tilka, {J. A.} and J. Park and Y. Ahn and A. Pateras and Sampson, {K. C.} and Savage, {D. E.} and Prance, {Jonathan Robert} and Simmons, {C. B.} and Coppersmith, {S. N.} and Eriksson, {M. A.} and Lagally, {M. G.} and Holt, {M. V.} and Evans, {P. G.}",
note = "This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. App. Phys. 120, 015304 (2016) and may be found at http://scitation.aip.org/content/aip/journal/jap/120/1/10.1063/1.4955043.",
year = "2016",
month = jul,
day = "6",
doi = "10.1063/1.4955043",
language = "English",
volume = "120",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",

}

RIS

TY - JOUR

T1 - Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

AU - Tilka, J. A.

AU - Park, J.

AU - Ahn, Y.

AU - Pateras, A.

AU - Sampson, K. C.

AU - Savage, D. E.

AU - Prance, Jonathan Robert

AU - Simmons, C. B.

AU - Coppersmith, S. N.

AU - Eriksson, M. A.

AU - Lagally, M. G.

AU - Holt, M. V.

AU - Evans, P. G.

N1 - This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. App. Phys. 120, 015304 (2016) and may be found at http://scitation.aip.org/content/aip/journal/jap/120/1/10.1063/1.4955043.

PY - 2016/7/6

Y1 - 2016/7/6

N2 - The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

AB - The highly coherent and tightly focused x-ray beams produced by hard x-ray light sources enable the nanoscale characterization of the structure of electronic materials but are accompanied by significant challenges in the interpretation of diffraction and scattering patterns. X-ray nanobeams exhibit optical coherence combined with a large angular divergence introduced by the x-ray focusing optics. The scattering of nanofocused x-ray beams from intricate semiconductor heterostructures produces a complex distribution of scattered intensity. We report here an extension of coherent x-ray optical simulations of convergent x-ray beam diffraction patterns to arbitrary x-ray incident angles to allow the nanobeam diffraction patterns of complex heterostructures to be simulated faithfully. These methods are used to extract the misorientation of lattice planes and the strain of individual layers from synchrotron x-ray nanobeam diffraction patterns of Si/SiGe heterostructures relevant to applications in quantum electronic devices. The systematic interpretation of nanobeam diffraction patterns from semiconductor heterostructures presents a new opportunity in characterizing and ultimately designing electronic materials.

U2 - 10.1063/1.4955043

DO - 10.1063/1.4955043

M3 - Journal article

VL - 120

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

M1 - 015304

ER -