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    Rights statement: This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-6641/ab337e

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Control of complex quantum structures in droplet epitaxy

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Control of complex quantum structures in droplet epitaxy. / Chawner, J M A; Chang, Y; Hodgson, P D et al.
In: Semiconductor Science and Technology, Vol. 34, No. 9, 095011, 13.08.2019.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

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Chawner JMA, Chang Y, Hodgson PD, Hayne M, Robson AJ, Sanchez AM et al. Control of complex quantum structures in droplet epitaxy. Semiconductor Science and Technology. 2019 Aug 13;34(9):095011. Epub 2019 Jul 19. doi: 10.1088/1361-6641/ab337e

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Chawner, J M A ; Chang, Y ; Hodgson, P D et al. / Control of complex quantum structures in droplet epitaxy. In: Semiconductor Science and Technology. 2019 ; Vol. 34, No. 9.

Bibtex

@article{3f42a21341884d79885c31c552495744,
title = "Control of complex quantum structures in droplet epitaxy",
abstract = "We report the controllable growth of GaAs quantum complexes in droplet molecular-beam epitaxy, and the optical properties of self-assembled AlxGa1-xAs quantum rings embedded in a superlattice. We found that Ga droplets on a GaAs substrate can retain their geometry up to a maximum temperature of 490 degrees C during post-growth annealing, with an optimal temperature of 320 degrees C for creating uniform and symmetric droplets. Through controlling only the crystallisation temperature under As-4 in the range of 450 degrees C to 580 degrees C, we can reliably control diffusion, adsorption and etching rates to produce various GaAs quantum complexes such as quantum dots, dot pairs and nanoholes. AlxGa1-xAs quantum rings are also realised within these temperatures via the adjustment of As beam equivalent pressure. We found that crystallisation using As-2 molecules in the place of As-4 creates smaller diameter quantum rings at higher density. The photoluminescence of As-2 grown AlxGa1-xAs quantum rings embedded in a superlattice shows a dominant emission from the quantum rings at elevated temperatures. This observation reveals the properties of the quantum ring carrier confinement and their potential application as efficient photon emitters.",
keywords = "droplet epitaxy, molecular beam epitaxy, quantum structure, photoluminescence, atomic force microscopy, transmission electron microscopy",
author = "Chawner, {J M A} and Y Chang and Hodgson, {P D} and M Hayne and Robson, {A J} and Sanchez, {A M} and Q Zhuang",
note = "This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-6641/ab337e",
year = "2019",
month = aug,
day = "13",
doi = "10.1088/1361-6641/ab337e",
language = "English",
volume = "34",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "Institute of Physics Publishing",
number = "9",

}

RIS

TY - JOUR

T1 - Control of complex quantum structures in droplet epitaxy

AU - Chawner, J M A

AU - Chang, Y

AU - Hodgson, P D

AU - Hayne, M

AU - Robson, A J

AU - Sanchez, A M

AU - Zhuang, Q

N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/1361-6641/ab337e

PY - 2019/8/13

Y1 - 2019/8/13

N2 - We report the controllable growth of GaAs quantum complexes in droplet molecular-beam epitaxy, and the optical properties of self-assembled AlxGa1-xAs quantum rings embedded in a superlattice. We found that Ga droplets on a GaAs substrate can retain their geometry up to a maximum temperature of 490 degrees C during post-growth annealing, with an optimal temperature of 320 degrees C for creating uniform and symmetric droplets. Through controlling only the crystallisation temperature under As-4 in the range of 450 degrees C to 580 degrees C, we can reliably control diffusion, adsorption and etching rates to produce various GaAs quantum complexes such as quantum dots, dot pairs and nanoholes. AlxGa1-xAs quantum rings are also realised within these temperatures via the adjustment of As beam equivalent pressure. We found that crystallisation using As-2 molecules in the place of As-4 creates smaller diameter quantum rings at higher density. The photoluminescence of As-2 grown AlxGa1-xAs quantum rings embedded in a superlattice shows a dominant emission from the quantum rings at elevated temperatures. This observation reveals the properties of the quantum ring carrier confinement and their potential application as efficient photon emitters.

AB - We report the controllable growth of GaAs quantum complexes in droplet molecular-beam epitaxy, and the optical properties of self-assembled AlxGa1-xAs quantum rings embedded in a superlattice. We found that Ga droplets on a GaAs substrate can retain their geometry up to a maximum temperature of 490 degrees C during post-growth annealing, with an optimal temperature of 320 degrees C for creating uniform and symmetric droplets. Through controlling only the crystallisation temperature under As-4 in the range of 450 degrees C to 580 degrees C, we can reliably control diffusion, adsorption and etching rates to produce various GaAs quantum complexes such as quantum dots, dot pairs and nanoholes. AlxGa1-xAs quantum rings are also realised within these temperatures via the adjustment of As beam equivalent pressure. We found that crystallisation using As-2 molecules in the place of As-4 creates smaller diameter quantum rings at higher density. The photoluminescence of As-2 grown AlxGa1-xAs quantum rings embedded in a superlattice shows a dominant emission from the quantum rings at elevated temperatures. This observation reveals the properties of the quantum ring carrier confinement and their potential application as efficient photon emitters.

KW - droplet epitaxy

KW - molecular beam epitaxy

KW - quantum structure

KW - photoluminescence

KW - atomic force microscopy

KW - transmission electron microscopy

U2 - 10.1088/1361-6641/ab337e

DO - 10.1088/1361-6641/ab337e

M3 - Journal article

VL - 34

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

M1 - 095011

ER -