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Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures

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Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. / Konemann, J ; Konig, P ; Schmidt, T et al.
In: Physical review B, Vol. 64, No. 15, 155314, 15.10.2001, p. -.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Konemann, J, Konig, P, Schmidt, T, McCann, E, Falko, V & Haug, RJ 2001, 'Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures', Physical review B, vol. 64, no. 15, 155314, pp. -. https://doi.org/10.1103/PhysRevB.64.155314

APA

Konemann, J., Konig, P., Schmidt, T., McCann, E., Falko, V., & Haug, R. J. (2001). Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. Physical review B, 64(15), -. Article 155314. https://doi.org/10.1103/PhysRevB.64.155314

Vancouver

Konemann J, Konig P, Schmidt T, McCann E, Falko V, Haug RJ. Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. Physical review B. 2001 Oct 15;64(15):-. 155314. doi: 10.1103/PhysRevB.64.155314

Author

Konemann, J ; Konig, P ; Schmidt, T et al. / Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures. In: Physical review B. 2001 ; Vol. 64, No. 15. pp. -.

Bibtex

@article{fd9bc150cc0e4b338d5e8509fb1f9153,
title = "Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures",
abstract = "Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single-particle wave functions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions, the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted.",
author = "J Konemann and P Konig and T Schmidt and E McCann and Vladimir Falko and Haug, {R J}",
year = "2001",
month = oct,
day = "15",
doi = "10.1103/PhysRevB.64.155314",
language = "English",
volume = "64",
pages = "--",
journal = "Physical review B",
issn = "0163-1829",
publisher = "AMER PHYSICAL SOC",
number = "15",

}

RIS

TY - JOUR

T1 - Correlation-function spectroscopy of inelastic lifetime in heavily doped GaAs heterostructures

AU - Konemann, J

AU - Konig, P

AU - Schmidt, T

AU - McCann, E

AU - Falko, Vladimir

AU - Haug, R J

PY - 2001/10/15

Y1 - 2001/10/15

N2 - Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single-particle wave functions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions, the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted.

AB - Measurements of resonant tunneling through a localized impurity state are used to probe fluctuations in the local density of states of heavily doped GaAs. The measured differential conductance is analyzed in terms of correlation functions with respect to voltage. A qualitative picture based on the scaling theory of Thouless is developed to relate the observed fluctuations to the statistics of single-particle wave functions. In a quantitative theory correlation functions are calculated. By comparing the experimental and theoretical correlation functions, the effective dimensionality of the emitter is analyzed and the dependence of the inelastic lifetime on energy is extracted.

U2 - 10.1103/PhysRevB.64.155314

DO - 10.1103/PhysRevB.64.155314

M3 - Journal article

VL - 64

SP - -

JO - Physical review B

JF - Physical review B

SN - 0163-1829

IS - 15

M1 - 155314

ER -