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Design considerations for In0.52Al0.48As based avalanche photodiodes

Research output: Contribution in Book/Report/ProceedingsConference contribution

Published

Publication date2008
Host publication20th International Conference on Indium Phosphide and Related Materials, 2008. IPRM 2008.
Place of publicationNew York
PublisherIEEE
Pages331-333
Number of pages3
ISBN (Print)978-1-4244-2258-6
Original languageEnglish

Conference

Conference20th International Conference on Indium Phosphide and Related Materials
CityVersailles
Period25/05/0829/05/08

Conference

Conference20th International Conference on Indium Phosphide and Related Materials
CityVersailles
Period25/05/0829/05/08

Abstract

We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mu m and 2.0 mu m, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p(+)-n-n(+) doping profiles produce the lowest and highest excess noise in diodes with avalanche regions of 0.2 mu m and 2.0 mu m respectively. However due to the higher peak electric fields in thin diodes with field gradients causing tunneling current to become significant, the ideal p(+)-i-n(+) diodes still provide the overall preferred structure. We also observed that different electric field gradients in the p(+) cladding regions have negligible effect on the excess noise factors.