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Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

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Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. . / Krier, A.; Huang, X. L.
In: Journal of Physics D: Applied Physics, Vol. 39, No. 2, 21.01.2006, p. 255-261.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Krier, A & Huang, XL 2006, 'Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .', Journal of Physics D: Applied Physics, vol. 39, no. 2, pp. 255-261. https://doi.org/10.1088/0022-3727/39/2/004

APA

Krier, A., & Huang, X. L. (2006). Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. . Journal of Physics D: Applied Physics, 39(2), 255-261. https://doi.org/10.1088/0022-3727/39/2/004

Vancouver

Krier A, Huang XL. Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. . Journal of Physics D: Applied Physics. 2006 Jan 21;39(2):255-261. doi: 10.1088/0022-3727/39/2/004

Author

Krier, A. ; Huang, X. L. / Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. . In: Journal of Physics D: Applied Physics. 2006 ; Vol. 39, No. 2. pp. 255-261.

Bibtex

@article{324532a7c2ca4d068e944efaf8f70eea,
title = "Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .",
abstract = "We report on an experimental investigation of the influence of different design parameters and their relative importance in the fabrication of uncooled InAs light emitting diodes. In addition, optimization of the key variables involved in the liquid phase growth of these devices, the careful consideration of carrier confinement, current spreading, re-absorption and optical extraction were also found to be essential in order to obtain maximum output.",
author = "A. Krier and Huang, {X. L.}",
year = "2006",
month = jan,
day = "21",
doi = "10.1088/0022-3727/39/2/004",
language = "English",
volume = "39",
pages = "255--261",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd",
number = "2",

}

RIS

TY - JOUR

T1 - Design considerations for uncooled InAs mid-infrared light emitting diodes grown by liquid phase epitaxy. .

AU - Krier, A.

AU - Huang, X. L.

PY - 2006/1/21

Y1 - 2006/1/21

N2 - We report on an experimental investigation of the influence of different design parameters and their relative importance in the fabrication of uncooled InAs light emitting diodes. In addition, optimization of the key variables involved in the liquid phase growth of these devices, the careful consideration of carrier confinement, current spreading, re-absorption and optical extraction were also found to be essential in order to obtain maximum output.

AB - We report on an experimental investigation of the influence of different design parameters and their relative importance in the fabrication of uncooled InAs light emitting diodes. In addition, optimization of the key variables involved in the liquid phase growth of these devices, the careful consideration of carrier confinement, current spreading, re-absorption and optical extraction were also found to be essential in order to obtain maximum output.

U2 - 10.1088/0022-3727/39/2/004

DO - 10.1088/0022-3727/39/2/004

M3 - Journal article

VL - 39

SP - 255

EP - 261

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 2

ER -