Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

Physics

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Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Published

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Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE. / Yin, M.; Krier, A.; Carrington, P. J. et al.
NARROW GAP SEMICONDUCTORS 2007. ed. / BN Murdin; S Clowes. DORDRECHT: Springer, 2008. p. 69-72.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSN › Conference contribution/Paper › peer-review

Harvard

Yin, M , Krier, A , Carrington, PJ , Jones, R & Krier, SE 2008, Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE. in BN Murdin & S Clowes (eds), NARROW GAP SEMICONDUCTORS 2007. Springer, DORDRECHT, pp. 69-72, 13th International Conference on Narrow Gap Semiconductors, Guildford, 8/07/07.

Bibtex

@inproceedings{dfb070ca46264ac3bf0ca69565c21ef3,

title = "Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE",

abstract = "InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to similar to 210 K in the optimized 5-layer structure.",

author = "M. Yin and A. Krier and Carrington, {P. J.} and Robert Jones and Krier, {S. E.}",

year = "2008",

language = "English",

isbn = "978-1-4020-8424-9",

pages = "69--72",

editor = "BN Murdin and S Clowes",

booktitle = "NARROW GAP SEMICONDUCTORS 2007",

publisher = "Springer",

note = "13th International Conference on Narrow Gap Semiconductors ; Conference date: 08-07-2007 Through 12-07-2007",

}

RIS

TY - GEN

T1 - Diode lasers for free space optical communications based on InAsSb/InAsSbP grown by LPE

AU - Yin, M.

AU - Krier, A.

AU - Carrington, P. J.

AU - Jones, Robert

AU - Krier, S. E.

PY - 2008

Y1 - 2008

N2 - InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to similar to 210 K in the optimized 5-layer structure.

AB - InAsSb/InAsSbP double heterojunction lasers have been grown by liquid phase epitaxy in which free carrier absorption loss was investigated and minimized by the introduction of two undoped quaternary layers on either side of the active region. The diode lasers operate readily in pulsed mode at elevated temperatures and emit near 3.45 mu m with a threshold current density as low as 118 A/cm(2) at 85 K. Compared to the conventional 3-layer DH laser, reducing the optical loss increases the maximum lasing temperature by 95 K to similar to 210 K in the optimized 5-layer structure.

M3 - Conference contribution/Paper

SN - 978-1-4020-8424-9

SP - 69

EP - 72

BT - NARROW GAP SEMICONDUCTORS 2007

A2 - Murdin, BN

A2 - Clowes, S

PB - Springer

CY - DORDRECHT

T2 - 13th International Conference on Narrow Gap Semiconductors

Y2 - 8 July 2007 through 12 July 2007

ER -

Research

Associated organisational units