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Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

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Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. / Cheetham, K. J.; Krier, A.; Marko, I. P. et al.
In: Applied Physics Letters, Vol. 99, No. 14, 141110, 03.10.2011, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Cheetham, KJ, Krier, A, Marko, IP, Aldukhayel, A & Sweeney, SJ 2011, 'Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes', Applied Physics Letters, vol. 99, no. 14, 141110, pp. -. https://doi.org/10.1063/1.3646910

APA

Cheetham, K. J., Krier, A., Marko, I. P., Aldukhayel, A., & Sweeney, S. J. (2011). Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. Applied Physics Letters, 99(14), -. Article 141110. https://doi.org/10.1063/1.3646910

Vancouver

Cheetham KJ, Krier A, Marko IP, Aldukhayel A, Sweeney SJ. Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. Applied Physics Letters. 2011 Oct 3;99(14):-. 141110. doi: 10.1063/1.3646910

Author

Cheetham, K. J. ; Krier, A. ; Marko, I. P. et al. / Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes. In: Applied Physics Letters. 2011 ; Vol. 99, No. 14. pp. -.

Bibtex

@article{99abd57d765f47d3a2954ccb2e569a04,
title = "Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes",
abstract = "Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.",
author = "Cheetham, {K. J.} and A. Krier and Marko, {I. P.} and A. Aldukhayel and Sweeney, {S. J.}",
year = "2011",
month = oct,
day = "3",
doi = "10.1063/1.3646910",
language = "English",
volume = "99",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "14",

}

RIS

TY - JOUR

T1 - Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

AU - Cheetham, K. J.

AU - Krier, A.

AU - Marko, I. P.

AU - Aldukhayel, A.

AU - Sweeney, S. J.

PY - 2011/10/3

Y1 - 2011/10/3

N2 - Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.

AB - Mid-infrared light emitting diodes based on the pentanary alloy GaInAsSbP have been engineered to provide a favourable band structure for the suppression of non-radiative Auger recombination which is dominant in narrow band gap III-V materials. Hydrostatic pressure measurements at room temperature and at 100 K were used to tune the band gap towards resonance with the spin-orbit band gap. Analysis of the resulting electroluminescence confirms that the non-radiative Auger recombination process involving the spin-orbit-split-off-band is suppressed under ambient conditions.

U2 - 10.1063/1.3646910

DO - 10.1063/1.3646910

M3 - Journal article

VL - 99

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 141110

ER -