Home > Research > Publications & Outputs > Discrete hole-charging observed in ensembles of...
View graph of relations

Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings

Research output: Contribution to conference - Without ISBN/ISSN Poster

Published

Standard

Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings. / Young, Robert.

2012. Poster session presented at ICPS 2012, Zurich, United Kingdom.

Research output: Contribution to conference - Without ISBN/ISSN Poster

Harvard

Young, R 2012, 'Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings', ICPS 2012, Zurich, United Kingdom, 29/07/12.

APA

Young, R. (2012). Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings. Poster session presented at ICPS 2012, Zurich, United Kingdom.

Vancouver

Young R. Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings. 2012. Poster session presented at ICPS 2012, Zurich, United Kingdom.

Author

Young, Robert. / Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings. Poster session presented at ICPS 2012, Zurich, United Kingdom.

Bibtex

@conference{e34b6fc7b8ec456b9247cd31b7045f12,
title = "Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings",
abstract = "The interaction between nano-scale objects of different dimensionality, e.g. electrostatic Coulomb-coupled zero-dimensional quantum dots (QD{\textquoteright}s) to two-dimensional (2D) systems, is both of fundamental interest and great relevance for the future of memory technology [1]. GaSb/(Al)GaAs quantum dots provide strong hole-confinement [2], with potential to provide long storage times at room temperature. ",
author = "Robert Young",
year = "2012",
month = jul
day = "29",
language = "English",
note = "ICPS 2012 ; Conference date: 29-07-2012",

}

RIS

TY - CONF

T1 - Discrete hole-charging observed in ensembles of GaSb/GaAs quantum rings

AU - Young, Robert

PY - 2012/7/29

Y1 - 2012/7/29

N2 - The interaction between nano-scale objects of different dimensionality, e.g. electrostatic Coulomb-coupled zero-dimensional quantum dots (QD’s) to two-dimensional (2D) systems, is both of fundamental interest and great relevance for the future of memory technology [1]. GaSb/(Al)GaAs quantum dots provide strong hole-confinement [2], with potential to provide long storage times at room temperature.

AB - The interaction between nano-scale objects of different dimensionality, e.g. electrostatic Coulomb-coupled zero-dimensional quantum dots (QD’s) to two-dimensional (2D) systems, is both of fundamental interest and great relevance for the future of memory technology [1]. GaSb/(Al)GaAs quantum dots provide strong hole-confinement [2], with potential to provide long storage times at room temperature.

M3 - Poster

T2 - ICPS 2012

Y2 - 29 July 2012

ER -