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Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy

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Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy. / Gruverman, Alexei; Kolosov, Oleg; Hatano, Jun et al.
In: Journal of Vacuum Science and Technology B, Vol. 13, No. 3, 05.1995, p. 1095-1099.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Gruverman, A, Kolosov, O, Hatano, J, Takahashi, K & Tokumoto, H 1995, 'Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy', Journal of Vacuum Science and Technology B, vol. 13, no. 3, pp. 1095-1099. https://doi.org/10.1116/1.587909

APA

Gruverman, A., Kolosov, O., Hatano, J., Takahashi, K., & Tokumoto, H. (1995). Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy. Journal of Vacuum Science and Technology B, 13(3), 1095-1099. https://doi.org/10.1116/1.587909

Vancouver

Gruverman A, Kolosov O, Hatano J, Takahashi K, Tokumoto H. Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy. Journal of Vacuum Science and Technology B. 1995 May;13(3):1095-1099. doi: 10.1116/1.587909

Author

Gruverman, Alexei ; Kolosov, Oleg ; Hatano, Jun et al. / Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy. In: Journal of Vacuum Science and Technology B. 1995 ; Vol. 13, No. 3. pp. 1095-1099.

Bibtex

@article{3c131b5f36db473caed6fd88bc73ddd8,
title = "Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy",
abstract = "The ferroelectric domain structure and its dynamics under applied electric field have been studied with nanoscale resolution by atomic force microscopy (AFM). Two mechanisms responsible for the contrast between opposite domains are proposed: large built‐in domains are delineated in friction mode due to the tip–sample electrostatic interaction, and small domains created by an external field are imaged in topography mode due to piezoelectric deformation of the crystal. The ability of effective control of ferroelectric domains by applying a voltage between the AFM tip and the bottom electrode is demonstrated. It is experimentally confirmed that the sidewise growth of domain proceeds through the nucleation process on the domain wall. ",
author = "Alexei Gruverman and Oleg Kolosov and Jun Hatano and Koichiro Takahashi and H. Tokumoto",
year = "1995",
month = may,
doi = "10.1116/1.587909",
language = "English",
volume = "13",
pages = "1095--1099",
journal = "Journal of Vacuum Science and Technology B",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

RIS

TY - JOUR

T1 - Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy

AU - Gruverman, Alexei

AU - Kolosov, Oleg

AU - Hatano, Jun

AU - Takahashi, Koichiro

AU - Tokumoto, H.

PY - 1995/5

Y1 - 1995/5

N2 - The ferroelectric domain structure and its dynamics under applied electric field have been studied with nanoscale resolution by atomic force microscopy (AFM). Two mechanisms responsible for the contrast between opposite domains are proposed: large built‐in domains are delineated in friction mode due to the tip–sample electrostatic interaction, and small domains created by an external field are imaged in topography mode due to piezoelectric deformation of the crystal. The ability of effective control of ferroelectric domains by applying a voltage between the AFM tip and the bottom electrode is demonstrated. It is experimentally confirmed that the sidewise growth of domain proceeds through the nucleation process on the domain wall.

AB - The ferroelectric domain structure and its dynamics under applied electric field have been studied with nanoscale resolution by atomic force microscopy (AFM). Two mechanisms responsible for the contrast between opposite domains are proposed: large built‐in domains are delineated in friction mode due to the tip–sample electrostatic interaction, and small domains created by an external field are imaged in topography mode due to piezoelectric deformation of the crystal. The ability of effective control of ferroelectric domains by applying a voltage between the AFM tip and the bottom electrode is demonstrated. It is experimentally confirmed that the sidewise growth of domain proceeds through the nucleation process on the domain wall.

U2 - 10.1116/1.587909

DO - 10.1116/1.587909

M3 - Journal article

VL - 13

SP - 1095

EP - 1099

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

SN - 1071-1023

IS - 3

ER -