12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Effect of disorder on a graphene p-n junction
View graph of relations

« Back

Effect of disorder on a graphene p-n junction

Research output: Contribution to journalJournal article

Published

???articleNumber???075420
Journal publication date1/02/2008
JournalPhysical Review B
Journal number7
Volume77
Number of pages5
Original languageEnglish

Abstract

We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.

Bibliographic note

© 2008 The American Physical Society