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Effect of disorder on a graphene p-n junction

Research output: Contribution to journalJournal article


Article number075420
<mark>Journal publication date</mark>1/02/2008
<mark>Journal</mark>Physical Review B
Number of pages5
<mark>Original language</mark>English


We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.

Bibliographic note

© 2008 The American Physical Society