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Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions

Research output: Contribution to journalJournal article


  • W. Knap
  • E. Frayssinet
  • M. L. Sadowski
  • C. Skierbiszewski
  • D. Maude
  • Vladimir Falko
  • M. Asif Khan
  • M. S. Shur
<mark>Journal publication date</mark>15/11/1999
<mark>Journal</mark>Applied Physics Letters
Issue number20
Number of pages3
Pages (from-to)3156-3158
<mark>Original language</mark>English


The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field. (C) 1999 American Institute of Physics. [S0003-6951(99)00845-1].