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Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions

Research output: Contribution to journalJournal article

Published

  • W. Knap
  • E. Frayssinet
  • M. L. Sadowski
  • C. Skierbiszewski
  • D. Maude
  • Vladimir Falko
  • M. Asif Khan
  • M. S. Shur
Journal publication date15/11/1999
JournalApplied Physics Letters
Journal number20
Volume75
Number of pages3
Pages3156-3158
Original languageEnglish

Abstract

The conduction band parameters of two-dimensional (2D) electrons in high density GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temperatures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04) was determined from the angular dependence of the amplitude of Shubnikov-de-Haas oscillations experiments in tilted magnetic field. (C) 1999 American Institute of Physics. [S0003-6951(99)00845-1].