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Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

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Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice. / Zhuang, Qiandong; Li, J. M.; Wang, X. X. et al.
In: Journal of Crystal Growth, Vol. 208, No. 1-4, 2000, p. 791-794.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Zhuang, Q, Li, JM, Wang, XX, Zeng, YP, Wang, YT, Wang, BQ, Pan, L, Wu, J, Kong, MY & Lin, LY 2000, 'Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice', Journal of Crystal Growth, vol. 208, no. 1-4, pp. 791-794. https://doi.org/10.1016/S0022-0248(99)00504-7

APA

Zhuang, Q., Li, J. M., Wang, X. X., Zeng, Y. P., Wang, Y. T., Wang, B. Q., Pan, L., Wu, J., Kong, M. Y., & Lin, L. Y. (2000). Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice. Journal of Crystal Growth, 208(1-4), 791-794. https://doi.org/10.1016/S0022-0248(99)00504-7

Vancouver

Zhuang Q, Li JM, Wang XX, Zeng YP, Wang YT, Wang BQ et al. Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice. Journal of Crystal Growth. 2000;208(1-4):791-794. doi: 10.1016/S0022-0248(99)00504-7

Author

Zhuang, Qiandong ; Li, J. M. ; Wang, X. X. et al. / Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice. In: Journal of Crystal Growth. 2000 ; Vol. 208, No. 1-4. pp. 791-794.

Bibtex

@article{a074450241f24ca4b1ec60e533c5c426,
title = "Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice",
abstract = "Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950°C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750°C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice.",
keywords = "InGaAs/GaAs, Quantum dots, Superlattice, Annealing, X-ray",
author = "Qiandong Zhuang and Li, {J. M.} and Wang, {X. X.} and Zeng, {Y. P.} and Wang, {Y. T.} and Wang, {B. Q.} and L. Pan and J. Wu and M.Y. Kong and Lin, {L. Y.}",
year = "2000",
doi = "10.1016/S0022-0248(99)00504-7",
language = "English",
volume = "208",
pages = "791--794",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

RIS

TY - JOUR

T1 - Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice

AU - Zhuang, Qiandong

AU - Li, J. M.

AU - Wang, X. X.

AU - Zeng, Y. P.

AU - Wang, Y. T.

AU - Wang, B. Q.

AU - Pan, L.

AU - Wu, J.

AU - Kong, M.Y.

AU - Lin, L. Y.

PY - 2000

Y1 - 2000

N2 - Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950°C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750°C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice.

AB - Postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of InGaAs/GaAs self-assembled quantum dots superlattice grown by molecular beam epitaxy. It is found that a significant narrowing of the luminescence linewidth (from 80 to 42 meV) occurs together with about 86 meV blue shift at annealing temperature up to 950°C. Double crystal X-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750°C, but recovered and increased again at higher annealing temperatures. This behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. The study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice.

KW - InGaAs/GaAs

KW - Quantum dots

KW - Superlattice

KW - Annealing

KW - X-ray

U2 - 10.1016/S0022-0248(99)00504-7

DO - 10.1016/S0022-0248(99)00504-7

M3 - Journal article

VL - 208

SP - 791

EP - 794

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -