Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Effects of substrate pm M comtent on the growth of the mid-infrared dilute nitride InAsN alloy
AU - De La Mare, Martin
AU - Zhuang, Qiandong
AU - Krier, Anthony
AU - Patane, A.
PY - 2012/10/3
Y1 - 2012/10/3
N2 - We investigate the epitaxial growth of the dilute nitride InAsN alloy onto InAs and GaAs substrates with nitrogen content up to 1%. We report photoluminescence (PL) emission within the 2–4 µm spectral region and show that InAsN grown onto GaAs exhibits no degradation of the PL intensity and linewidth compared with epitaxial layers grown on near lattice-matched InAs substrates. Also, nitrogen can induce a significant reduction in the thermal quenching of the PL emission, which we attribute to the reduction in non-radiative Auger-recombination.
AB - We investigate the epitaxial growth of the dilute nitride InAsN alloy onto InAs and GaAs substrates with nitrogen content up to 1%. We report photoluminescence (PL) emission within the 2–4 µm spectral region and show that InAsN grown onto GaAs exhibits no degradation of the PL intensity and linewidth compared with epitaxial layers grown on near lattice-matched InAs substrates. Also, nitrogen can induce a significant reduction in the thermal quenching of the PL emission, which we attribute to the reduction in non-radiative Auger-recombination.
U2 - 10.1088/0022-3727/45/39/395103
DO - 10.1088/0022-3727/45/39/395103
M3 - Journal article
VL - 45
SP - 395103
EP - 395105
JO - Journal of Physics D: Applied Physics
JF - Journal of Physics D: Applied Physics
SN - 0022-3727
IS - 39
ER -