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    Rights statement: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in APL Materials 4, 066102 (2016) and may be found at http://scitation.aip.org/content/aip/journal/aplmater/4/6/10.1063/1.4954054

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Electrode-stress-induced nanoscale disorder in Si quantum electronic devices

Research output: Contribution to journalJournal articlepeer-review

  • J. Park
  • Y. Ahn
  • J. A. Tilka
  • K. C. Sampson
  • D. E. Savage
  • Jonathan Robert Prance
  • C. B. Simmons
  • M. G. Lagally
  • S. N. Coppersmith
  • M. A. Eriksson
  • M. V. Holt
  • P. G. Evans
Article number066102
<mark>Journal publication date</mark>06/2016
<mark>Journal</mark>APL Materials
Issue number6
Number of pages9
Publication StatusPublished
Early online date20/06/16
<mark>Original language</mark>English


Disorder in the potential-energy landscape presents a major obstacle to the more rapid development of semiconductor quantum device technologies. We report a large-magnitude source of disorder, beyond commonly considered unintentional background doping or fixed charge in oxide layers: nanoscale strain fields induced by residual stresses in nanopatterned metal gates. Quantitative analysis of synchrotron coherent hard x-ray nanobeam diffraction patterns reveals gate-induced curvature and strains up to 0.03% in a buried Si quantum well within a Si/SiGe heterostructure. Electrode stress presents both challenges to the design of devices and opportunities associated with the lateral manipulation of electronic energy levels.