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Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
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TY - JOUR
T1 - Electroluminescence and photoluminescence of type-II InAs/InAsSb strained-layer superlattices in the mid-infrared
AU - Keen, James
AU - Repiso Menendez, Eva
AU - Lu, Qi
AU - Kesaria, Manoj
AU - Marshall, Andrew Robert Julian
AU - Krier, Anthony
PY - 2018/9
Y1 - 2018/9
N2 - There is continuing interest in the development of superlattices for use in photonic devices operating in the technologically important mid-infrared spectral range. In this work type-II strained-layer superlattices of InAs / InAs1-xSbx (x=0.04 and x=0.06) were grown on InAs (100) substrates by MBE. Structural analysis of the samples revealed good crystalline quality but a non-uniform distribution of Sb within the QWs which originated from segregation effects during growth. Bright photoluminescence emission was obtained at low temperature (4 K) which persisted up to 300 K. Two prototype samples were grown containing the corresponding superlattices in the active region and fabricated into LEDs. Mid-infrared electroluminescence was obtained from both these LEDs over the temperature range 7 – 300 K and both devices exhibit emission coincident with the main CO2 absorption band near 4.2 μm at room temperature. These LEDs produced output powers of 8.2 µW and 3.3 µW under 100 mA injection current at room temperature and are of interest for CO2 detection and further development for mid-infrared gas sensing applications.
AB - There is continuing interest in the development of superlattices for use in photonic devices operating in the technologically important mid-infrared spectral range. In this work type-II strained-layer superlattices of InAs / InAs1-xSbx (x=0.04 and x=0.06) were grown on InAs (100) substrates by MBE. Structural analysis of the samples revealed good crystalline quality but a non-uniform distribution of Sb within the QWs which originated from segregation effects during growth. Bright photoluminescence emission was obtained at low temperature (4 K) which persisted up to 300 K. Two prototype samples were grown containing the corresponding superlattices in the active region and fabricated into LEDs. Mid-infrared electroluminescence was obtained from both these LEDs over the temperature range 7 – 300 K and both devices exhibit emission coincident with the main CO2 absorption band near 4.2 μm at room temperature. These LEDs produced output powers of 8.2 µW and 3.3 µW under 100 mA injection current at room temperature and are of interest for CO2 detection and further development for mid-infrared gas sensing applications.
KW - InAs/InAsSb
KW - superlattice
KW - type-II
KW - mid-infared
KW - LED
U2 - 10.1016/j.infrared.2018.08.001
DO - 10.1016/j.infrared.2018.08.001
M3 - Journal article
VL - 93
SP - 375
EP - 380
JO - Infrared Physics and Technology
JF - Infrared Physics and Technology
SN - 1350-4495
ER -