Home > Research > Publications & Outputs > Electron dominated impact ionization and avalan...

Research

Links

Text available via DOI:

Keywords

View graph of relations

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. / Marshall, A. R. J.; Tan, C. H.; Steer, M. J. et al.
In: Applied Physics Letters, Vol. 93, No. 11, 111107, 15.09.2008, p. -.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Marshall, ARJ, Tan, CH, Steer, MJ & David, JPR 2008, 'Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes', Applied Physics Letters, vol. 93, no. 11, 111107, pp. -. https://doi.org/10.1063/1.2980451

APA

Marshall, A. R. J., Tan, C. H., Steer, M. J., & David, J. P. R. (2008). Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. Applied Physics Letters, 93(11), -. Article 111107. https://doi.org/10.1063/1.2980451

Vancouver

Marshall ARJ, Tan CH, Steer MJ, David JPR. Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. Applied Physics Letters. 2008 Sept 15;93(11):-. 111107. doi: 10.1063/1.2980451

Author

Marshall, A. R. J. ; Tan, C. H. ; Steer, M. J. et al. / Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes. In: Applied Physics Letters. 2008 ; Vol. 93, No. 11. pp. -.

Bibtex

@article{953ed28ae74e43e59eef6bd99da06921,
title = "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes",
abstract = "An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. This indicates that the electron ionization coefficient is significantly greater than the hole ionization coefficient raising the possibility of extremely low noise InAs avalanche photodiodes when gain is initiated by electrons. The onset of electron initiated impact ionization was detectable at electric fields below 10 kV cm(-1) with useful gain observed at biases below 10 V. (C) 2008 American Institute of Physics.",
keywords = "avalanche photodiodes, electron impact ionisation , III-V semiconductors , indium compounds , p-i-n photodiodes , semiconductor diodes",
author = "Marshall, {A. R. J.} and Tan, {C. H.} and Steer, {M. J.} and David, {J. P. R.}",
year = "2008",
month = sep,
day = "15",
doi = "10.1063/1.2980451",
language = "English",
volume = "93",
pages = "--",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "11",

}

RIS

TY - JOUR

T1 - Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

AU - Marshall, A. R. J.

AU - Tan, C. H.

AU - Steer, M. J.

AU - David, J. P. R.

PY - 2008/9/15

Y1 - 2008/9/15

N2 - An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. This indicates that the electron ionization coefficient is significantly greater than the hole ionization coefficient raising the possibility of extremely low noise InAs avalanche photodiodes when gain is initiated by electrons. The onset of electron initiated impact ionization was detectable at electric fields below 10 kV cm(-1) with useful gain observed at biases below 10 V. (C) 2008 American Institute of Physics.

AB - An experimental investigation into impact ionization in InAs photodiodes is presented. Photomultiplication measurements on p-i-n and n-i-p diodes show that while high avalanche gains can be obtained for electron initiated multiplication, there is virtually no gain with hole initiated multiplication. This indicates that the electron ionization coefficient is significantly greater than the hole ionization coefficient raising the possibility of extremely low noise InAs avalanche photodiodes when gain is initiated by electrons. The onset of electron initiated impact ionization was detectable at electric fields below 10 kV cm(-1) with useful gain observed at biases below 10 V. (C) 2008 American Institute of Physics.

KW - avalanche photodiodes

KW - electron impact ionisation

KW - III-V semiconductors

KW - indium compounds

KW - p-i-n photodiodes

KW - semiconductor diodes

U2 - 10.1063/1.2980451

DO - 10.1063/1.2980451

M3 - Journal article

VL - 93

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 111107

ER -