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Electron localization by self-assembled GaSb/GaAs quantum dots.

Research output: Contribution to journalJournal article


  • Manus Hayne
  • Stefan Bersier
  • Jochen Maes
  • Victor V Moshchalkov
  • Andrei Schliwa
  • Lutz Muller-Kirsch
  • Christian Kapteyn
  • Robert Heitz
  • Dieter Bimberg
<mark>Journal publication date</mark>16/06/2003
<mark>Journal</mark>Applied Physics Letters
Issue number24
Number of pages3
Pages (from-to)4355-4357
<mark>Original language</mark>English


We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes.

Bibliographic note

Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (24), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/4355/1