12,000

We have over 12,000 students, from over 100 countries, within one of the safest campuses in the UK

93%

93% of Lancaster students go into work or further study within six months of graduating

Home > Research > Publications & Outputs > Electron localization by self-assembled GaSb/Ga...
View graph of relations

« Back

Electron localization by self-assembled GaSb/GaAs quantum dots.

Research output: Contribution to journalJournal article

Published

  • Manus Hayne
  • Stefan Bersier
  • Jochen Maes
  • Victor V Moshchalkov
  • Andrei Schliwa
  • Lutz Muller-Kirsch
  • Christian Kapteyn
  • Robert Heitz
  • Dieter Bimberg
Journal publication date16/06/2003
JournalApplied Physics Letters
Journal number24
Volume82
Number of pages3
Pages4355-4357
Original languageEnglish

Abstract

We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes.

Bibliographic note

Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (24), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/4355/1