Home > Research > Publications & Outputs > Electron localization by self-assembled GaSb/Ga...

Research

Electronic data

Links

Text available via DOI:

View graph of relations

Electron localization by self-assembled GaSb/GaAs quantum dots.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Published

Standard

Electron localization by self-assembled GaSb/GaAs quantum dots. / Hayne, Manus; Bersier, Stefan; Maes, Jochen et al.
In: Applied Physics Letters, Vol. 82, No. 24, 16.06.2003, p. 4355-4357.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Hayne, M, Bersier, S, Maes, J, Moshchalkov, VV, Schliwa, A, Muller-Kirsch, L, Kapteyn, C, Heitz, R & Bimberg, D 2003, 'Electron localization by self-assembled GaSb/GaAs quantum dots.', Applied Physics Letters, vol. 82, no. 24, pp. 4355-4357. https://doi.org/10.1063/1.1583853

APA

Hayne, M., Bersier, S., Maes, J., Moshchalkov, V. V., Schliwa, A., Muller-Kirsch, L., Kapteyn, C., Heitz, R., & Bimberg, D. (2003). Electron localization by self-assembled GaSb/GaAs quantum dots. Applied Physics Letters, 82(24), 4355-4357. https://doi.org/10.1063/1.1583853

Vancouver

Hayne M, Bersier S, Maes J, Moshchalkov VV, Schliwa A, Muller-Kirsch L et al. Electron localization by self-assembled GaSb/GaAs quantum dots. Applied Physics Letters. 2003 Jun 16;82(24):4355-4357. doi: 10.1063/1.1583853

Author

Hayne, Manus ; Bersier, Stefan ; Maes, Jochen et al. / Electron localization by self-assembled GaSb/GaAs quantum dots. In: Applied Physics Letters. 2003 ; Vol. 82, No. 24. pp. 4355-4357.

Bibtex

@article{51f4e4abf6db40afb59b60d8bd0c3988,
title = "Electron localization by self-assembled GaSb/GaAs quantum dots.",
abstract = "We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes. ",
author = "Manus Hayne and Stefan Bersier and Jochen Maes and Moshchalkov, {Victor V} and Andrei Schliwa and Lutz Muller-Kirsch and Christian Kapteyn and Robert Heitz and Dieter Bimberg",
note = "Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (24), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/4355/1 ",
year = "2003",
month = jun,
day = "16",
doi = "10.1063/1.1583853",
language = "English",
volume = "82",
pages = "4355--4357",
journal = "Applied Physics Letters",
issn = "1077-3118",
publisher = "American Institute of Physics Inc.",
number = "24",

}

RIS

TY - JOUR

T1 - Electron localization by self-assembled GaSb/GaAs quantum dots.

AU - Hayne, Manus

AU - Bersier, Stefan

AU - Maes, Jochen

AU - Moshchalkov, Victor V

AU - Schliwa, Andrei

AU - Muller-Kirsch, Lutz

AU - Kapteyn, Christian

AU - Heitz, Robert

AU - Bimberg, Dieter

N1 - Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 82 (24), 2003 and may be found at http://link.aip.org/link/?APPLAB/82/4355/1

PY - 2003/6/16

Y1 - 2003/6/16

N2 - We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes.

AB - We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic fields up to 50 T. Our results show that at low laser power, electrons are more weakly bound to the dots than to the wetting layer, but that at high laser power, the situation is reversed. We attribute this effect to an enhanced Coulomb interaction between a single electron and dots that are multiply charged with holes.

U2 - 10.1063/1.1583853

DO - 10.1063/1.1583853

M3 - Journal article

VL - 82

SP - 4355

EP - 4357

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 1077-3118

IS - 24

ER -