Home > Research > Publications & Outputs > Electronic transport in normal-conductor/graphe...

Electronic data

Links

Text available via DOI:

View graph of relations

Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density .

Research output: Contribution to journalJournal articlepeer-review

Published
<mark>Journal publication date</mark>2007
<mark>Journal</mark>Physical review B
Volume76
Pages (from-to)115430
Publication StatusPublished
<mark>Original language</mark>English

Abstract

We investigate the conductance of normal-conductor/graphene/normal-conductor (NGN) junctions for arbitrary on-site potentials in the normal and graphitic parts of the system. We find that a ballistic NGN junction can display insulating behavior even when the charge-carrier density in the graphene part is finite. This effect originates in the different k intervals supporting propagating modes in graphene and a normal conductor, and persists for moderate levels of bulk, edge, or interface disorder. The ensuing conductance thresholds could be used as an electronic tool to map out details of the graphene band structure in absolute k space.