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Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

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Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. / Carrington, P. J.; Wagener, M. C.; Botha, J. R. et al.
In: Applied Physics Letters, Vol. 101, No. 23, 231101, 03.12.2012.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Carrington, PJ, Wagener, MC, Botha, JR, Sanchez, AM & Krier, A 2012, 'Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells', Applied Physics Letters, vol. 101, no. 23, 231101. https://doi.org/10.1063/1.4768942

APA

Carrington, P. J., Wagener, M. C., Botha, J. R., Sanchez, A. M., & Krier, A. (2012). Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. Applied Physics Letters, 101(23), Article 231101. https://doi.org/10.1063/1.4768942

Vancouver

Carrington PJ, Wagener MC, Botha JR, Sanchez AM, Krier A. Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. Applied Physics Letters. 2012 Dec 3;101(23):231101. doi: 10.1063/1.4768942

Author

Carrington, P. J. ; Wagener, M. C. ; Botha, J. R. et al. / Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells. In: Applied Physics Letters. 2012 ; Vol. 101, No. 23.

Bibtex

@article{3c31d2c724b8449bb37051af2d5ddd97,
title = "Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells",
abstract = "GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by similar to 6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768942]",
keywords = "gallium arsenide, gallium compounds, III-V semiconductors, infrared spectra, nanostructured materials, semiconductor quantum dots, solar cells",
author = "Carrington, {P. J.} and Wagener, {M. C.} and Botha, {J. R.} and Sanchez, {A. M.} and A. Krier",
year = "2012",
month = dec,
day = "3",
doi = "10.1063/1.4768942",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "23",

}

RIS

TY - JOUR

T1 - Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

AU - Carrington, P. J.

AU - Wagener, M. C.

AU - Botha, J. R.

AU - Sanchez, A. M.

AU - Krier, A.

PY - 2012/12/3

Y1 - 2012/12/3

N2 - GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by similar to 6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768942]

AB - GaAs-based solar cells containing stacked layers of nanostructured type II GaSb quantum ring solar cells are reported which show significantly enhanced infrared photo-response extending out to 1400 nm. The ring formation reduces the net strain energy associated with the large lattice mismatch making it possible to stack multi-layers without the need for strain balancing. The (1 sun) short-circuit current for a 10 layer sample is enhanced by similar to 6% compared to a GaAs control cell. The corresponding open-circuit voltage of 0.6 V is close to the theoretical maximum expected from such structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768942]

KW - gallium arsenide

KW - gallium compounds

KW - III-V semiconductors

KW - infrared spectra

KW - nanostructured materials

KW - semiconductor quantum dots

KW - solar cells

U2 - 10.1063/1.4768942

DO - 10.1063/1.4768942

M3 - Journal article

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231101

ER -