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Enhancing light capture by silicon: with the help of molecules

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Enhancing light capture by silicon: with the help of molecules. / Alderman, Nick; Danos, Lefteris; Fang, Liping et al.
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th. Denver, CO, USA: IEEE, 2014. p. 17-21.

Research output: Contribution in Book/Report/Proceedings - With ISBN/ISSNConference contribution/Paperpeer-review

Harvard

Alderman, N, Danos, L, Fang, L, Parel, TS & Markvart, T 2014, Enhancing light capture by silicon: with the help of molecules. in Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th. IEEE, Denver, CO, USA, pp. 17-21. https://doi.org/10.1109/PVSC.2014.6924987

APA

Alderman, N., Danos, L., Fang, L., Parel, T. S., & Markvart, T. (2014). Enhancing light capture by silicon: with the help of molecules. In Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th (pp. 17-21). IEEE. https://doi.org/10.1109/PVSC.2014.6924987

Vancouver

Alderman N, Danos L, Fang L, Parel TS, Markvart T. Enhancing light capture by silicon: with the help of molecules. In Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th. Denver, CO, USA: IEEE. 2014. p. 17-21 doi: 10.1109/PVSC.2014.6924987

Author

Alderman, Nick ; Danos, Lefteris ; Fang, Liping et al. / Enhancing light capture by silicon : with the help of molecules. Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th. Denver, CO, USA : IEEE, 2014. pp. 17-21

Bibtex

@inproceedings{ee9b1c6e518e4fc49ae693a5d092facf,
title = "Enhancing light capture by silicon: with the help of molecules",
abstract = "Efficient capture of sunlight remains one of the great challenges to photovoltaics today. This is particularly so for the dominant photovoltaic material - crystalline silicon - which, as an indirect gap semiconductor, needs several hundredmicrometers thickness for efficient operation. This paper gives an overview of the principal concepts that are currently being considered to enhance light capture by the solar cell. We shall, in particular, compare and contrast two main ideas of thought that underpin the current status of the field. The first, based onthermodynamics, makes use of light trapping where photon path within a structure is extended by virtue of a stochastic photon distribution inside a dielectric 1 weakly absorbing semiconductor. The second approach rests on the use of sub-wavelength or nanoscalestructures which allow the possibility of electromagnetic energy injection into very thin semiconductor layers, by direct interaction with the trapped modes or via the near field of an intermediate dipole absorber or scatterer. We review a range of techniques which are available to reducing the thickness of crystalline silicon solar cells to below l(m with the use of molecular layers deposited on thin crystalline silicon layers by spin coating, as Langmuir-Blodgett films, or directly anchored to silicon by covalent bonding.",
author = "Nick Alderman and Lefteris Danos and Liping Fang and Parel, {Thomas S.} and Tomas Markvart",
year = "2014",
month = jun,
day = "8",
doi = "10.1109/PVSC.2014.6924987",
language = "English",
pages = "17--21",
booktitle = "Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th",
publisher = "IEEE",

}

RIS

TY - GEN

T1 - Enhancing light capture by silicon

T2 - with the help of molecules

AU - Alderman, Nick

AU - Danos, Lefteris

AU - Fang, Liping

AU - Parel, Thomas S.

AU - Markvart, Tomas

PY - 2014/6/8

Y1 - 2014/6/8

N2 - Efficient capture of sunlight remains one of the great challenges to photovoltaics today. This is particularly so for the dominant photovoltaic material - crystalline silicon - which, as an indirect gap semiconductor, needs several hundredmicrometers thickness for efficient operation. This paper gives an overview of the principal concepts that are currently being considered to enhance light capture by the solar cell. We shall, in particular, compare and contrast two main ideas of thought that underpin the current status of the field. The first, based onthermodynamics, makes use of light trapping where photon path within a structure is extended by virtue of a stochastic photon distribution inside a dielectric 1 weakly absorbing semiconductor. The second approach rests on the use of sub-wavelength or nanoscalestructures which allow the possibility of electromagnetic energy injection into very thin semiconductor layers, by direct interaction with the trapped modes or via the near field of an intermediate dipole absorber or scatterer. We review a range of techniques which are available to reducing the thickness of crystalline silicon solar cells to below l(m with the use of molecular layers deposited on thin crystalline silicon layers by spin coating, as Langmuir-Blodgett films, or directly anchored to silicon by covalent bonding.

AB - Efficient capture of sunlight remains one of the great challenges to photovoltaics today. This is particularly so for the dominant photovoltaic material - crystalline silicon - which, as an indirect gap semiconductor, needs several hundredmicrometers thickness for efficient operation. This paper gives an overview of the principal concepts that are currently being considered to enhance light capture by the solar cell. We shall, in particular, compare and contrast two main ideas of thought that underpin the current status of the field. The first, based onthermodynamics, makes use of light trapping where photon path within a structure is extended by virtue of a stochastic photon distribution inside a dielectric 1 weakly absorbing semiconductor. The second approach rests on the use of sub-wavelength or nanoscalestructures which allow the possibility of electromagnetic energy injection into very thin semiconductor layers, by direct interaction with the trapped modes or via the near field of an intermediate dipole absorber or scatterer. We review a range of techniques which are available to reducing the thickness of crystalline silicon solar cells to below l(m with the use of molecular layers deposited on thin crystalline silicon layers by spin coating, as Langmuir-Blodgett films, or directly anchored to silicon by covalent bonding.

U2 - 10.1109/PVSC.2014.6924987

DO - 10.1109/PVSC.2014.6924987

M3 - Conference contribution/Paper

SP - 17

EP - 21

BT - Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

PB - IEEE

CY - Denver, CO, USA

ER -