Research output: Contribution to Journal/Magazine › Journal article › peer-review
Research output: Contribution to Journal/Magazine › Journal article › peer-review
}
TY - JOUR
T1 - Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions
AU - Hakimi, A. M. H. R.
AU - Banerjee, N.
AU - Aziz, A.
AU - Robinson, J. W. A.
AU - Blamire, M. G.
PY - 2010/3/8
Y1 - 2010/3/8
N2 - We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]
AB - We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]
KW - MULTILAYERS
KW - INJECTION
KW - FERROMAGNETISM
KW - FILMS
KW - GIANT MAGNETORESISTANCE
U2 - 10.1063/1.3339882
DO - 10.1063/1.3339882
M3 - Journal article
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 10
M1 - 102514
ER -