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Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

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Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions. / Hakimi, A. M. H. R.; Banerjee, N.; Aziz, A. et al.
In: Applied Physics Letters, Vol. 96, No. 10, 102514, 08.03.2010.

Research output: Contribution to Journal/MagazineJournal articlepeer-review

Harvard

Hakimi, AMHR, Banerjee, N, Aziz, A, Robinson, JWA & Blamire, MG 2010, 'Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions', Applied Physics Letters, vol. 96, no. 10, 102514. https://doi.org/10.1063/1.3339882

APA

Hakimi, A. M. H. R., Banerjee, N., Aziz, A., Robinson, J. W. A., & Blamire, M. G. (2010). Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions. Applied Physics Letters, 96(10), Article 102514. https://doi.org/10.1063/1.3339882

Vancouver

Hakimi AMHR, Banerjee N, Aziz A, Robinson JWA, Blamire MG. Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions. Applied Physics Letters. 2010 Mar 8;96(10):102514. doi: 10.1063/1.3339882

Author

Hakimi, A. M. H. R. ; Banerjee, N. ; Aziz, A. et al. / Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions. In: Applied Physics Letters. 2010 ; Vol. 96, No. 10.

Bibtex

@article{0812512101b54877b5c5a54c56630b01,
title = "Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions",
abstract = "We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]",
keywords = "MULTILAYERS, INJECTION, FERROMAGNETISM, FILMS, GIANT MAGNETORESISTANCE",
author = "Hakimi, {A. M. H. R.} and N. Banerjee and A. Aziz and Robinson, {J. W. A.} and Blamire, {M. G.}",
year = "2010",
month = mar,
day = "8",
doi = "10.1063/1.3339882",
language = "English",
volume = "96",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "10",

}

RIS

TY - JOUR

T1 - Estimating the spin diffusion length of semiconducting Indium Tin Oxide using Co/Indium Tin Oxide/Co spin valve junctions

AU - Hakimi, A. M. H. R.

AU - Banerjee, N.

AU - Aziz, A.

AU - Robinson, J. W. A.

AU - Blamire, M. G.

PY - 2010/3/8

Y1 - 2010/3/8

N2 - We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]

AB - We have measured the transport behavior of Co/Indium Tin Oxide (ITO)/Co current-perpendicular-to-plane submicron spin-valve devices with ITO spacer thickness up to 20 nm, fabricated directly using a three-dimensional focused-ion beam etching technique. Using a simplified Valet-Fert model, we have determined a spin asymmetry ratio for Co of 0.55 and spin diffusion length of 6 +/- 1 nm in semiconducting ITO at room temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3339882]

KW - MULTILAYERS

KW - INJECTION

KW - FERROMAGNETISM

KW - FILMS

KW - GIANT MAGNETORESISTANCE

U2 - 10.1063/1.3339882

DO - 10.1063/1.3339882

M3 - Journal article

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 102514

ER -