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Excess avalanche noise in In0.52Al0.48As

Research output: Contribution to journalJournal article


  • Y. L. Goh
  • A. R. J. Marshall
  • D. J. Massey
  • J. S. Ng
  • C. H. Tan
  • M. Hopkinson
  • J. P. R. David
  • S. K. Jones
  • C. C. Button
  • S. M. Pinches

Associated organisational unit

Journal publication date2007
JournalIEEE Journal of Quantum Electronics
Number of pages5
Original languageEnglish


Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.