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Excess avalanche noise in In0.52Al0.48As

Research output: Contribution to journalJournal article

  • Y. L. Goh
  • A. R. J. Marshall
  • D. J. Massey
  • J. S. Ng
  • C. H. Tan
  • M. Hopkinson
  • J. P. R. David
  • S. K. Jones
  • C. C. Button
  • S. M. Pinches
<mark>Journal publication date</mark>2007
<mark>Journal</mark>IEEE Journal of Quantum Electronics
Issue number5-6
Number of pages5
Pages (from-to)503-507
<mark>Original language</mark>English


Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.