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Excess avalanche noise in In0.52Al0.48As

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Excess avalanche noise in In0.52Al0.48As. / Goh, Y. L.; Marshall, A. R. J.; Massey, D. J. et al.
In: IEEE Journal of Quantum Electronics, Vol. 43, No. 5-6, 2007, p. 503-507.

Research output: Contribution to Journal/Magazine › Journal article › peer-review

Harvard

Goh, YL, Marshall, ARJ, Massey, DJ, Ng, JS, Tan, CH, Hopkinson, M, David, JPR, Jones, SK, Button, CC & Pinches, SM 2007, 'Excess avalanche noise in In0.52Al0.48As', IEEE Journal of Quantum Electronics, vol. 43, no. 5-6, pp. 503-507. https://doi.org/10.1109/JQE.2007.897900

APA

Goh, Y. L., Marshall, A. R. J., Massey, D. J., Ng, J. S., Tan, C. H., Hopkinson, M., David, J. P. R., Jones, S. K., Button, C. C., & Pinches, S. M. (2007). Excess avalanche noise in In0.52Al0.48As. IEEE Journal of Quantum Electronics, 43(5-6), 503-507. https://doi.org/10.1109/JQE.2007.897900

Vancouver

Goh YL, Marshall ARJ, Massey DJ, Ng JS, Tan CH, Hopkinson M et al. Excess avalanche noise in In0.52Al0.48As. IEEE Journal of Quantum Electronics. 2007;43(5-6):503-507. doi: 10.1109/JQE.2007.897900

Author

Goh, Y. L. ; Marshall, A. R. J. ; Massey, D. J. et al. / Excess avalanche noise in In0.52Al0.48As. In: IEEE Journal of Quantum Electronics. 2007 ; Vol. 43, No. 5-6. pp. 503-507.

Bibtex

@article{f3b5b0a3d3384c73a4e9c2d3f2070073,
title = "Excess avalanche noise in In0.52Al0.48As",
abstract = "Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.",
author = "Goh, {Y. L.} and Marshall, {A. R. J.} and Massey, {D. J.} and Ng, {J. S.} and Tan, {C. H.} and M. Hopkinson and David, {J. P. R.} and Jones, {S. K.} and Button, {C. C.} and Pinches, {S. M.}",
year = "2007",
doi = "10.1109/JQE.2007.897900",
language = "English",
volume = "43",
pages = "503--507",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5-6",

}

RIS

TY - JOUR

T1 - Excess avalanche noise in In0.52Al0.48As

AU - Goh, Y. L.

AU - Marshall, A. R. J.

AU - Massey, D. J.

AU - Ng, J. S.

AU - Tan, C. H.

AU - Hopkinson, M.

AU - David, J. P. R.

AU - Jones, S. K.

AU - Button, C. C.

AU - Pinches, S. M.

PY - 2007

Y1 - 2007

N2 - Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.

AB - Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.

U2 - 10.1109/JQE.2007.897900

DO - 10.1109/JQE.2007.897900

M3 - Journal article

VL - 43

SP - 503

EP - 507

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 5-6

ER -